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Ramachandran, T. R., Heitz, R., Chen, P., Madhukar, A. (1997) Mass transfer in Stranski–Krastanow growth of InAs on GaAs. Applied Physics Letters, 70 (5). 640-642 doi:10.1063/1.118848

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Reference TypeJournal (article/letter/editorial)
TitleMass transfer in Stranski–Krastanow growth of InAs on GaAs
JournalApplied Physics Letters
AuthorsRamachandran, T. R.Author
Heitz, R.Author
Chen, P.Author
Madhukar, A.Author
Year1997 (February 3)Volume70
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.118848Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8519107Long-form Identifiermindat:1:5:8519107:5
GUID0
Full ReferenceRamachandran, T. R., Heitz, R., Chen, P., Madhukar, A. (1997) Mass transfer in Stranski–Krastanow growth of InAs on GaAs. Applied Physics Letters, 70 (5). 640-642 doi:10.1063/1.118848
Plain TextRamachandran, T. R., Heitz, R., Chen, P., Madhukar, A. (1997) Mass transfer in Stranski–Krastanow growth of InAs on GaAs. Applied Physics Letters, 70 (5). 640-642 doi:10.1063/1.118848
In(1997, February) Applied Physics Letters Vol. 70 (5) AIP Publishing

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Ramachandran, T. R., Heitz, R., Chen, P., Madhukar, A. (1997) Erratum: “Mass transfer in Stranski–Krastanow growth of InAs on GaAs” [Appl. Phys. Lett.70, 640 (1997)]. Applied Physics Letters, 70 (23). 3169 doi:10.1063/1.119270
Ramachandran, T.R., Heitz, R., Kobayashi, N.P., Kalburge, A., Yu, W., Chen, P., Madhukar, A. (1997) Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001). Journal of Crystal Growth, 175. 216-223 doi:10.1016/s0022-0248(96)00855-x
Heitz, R., Ramachandran, T. R., Kalburge, A., Xie, Q., Mukhametzhanov, I., Chen, P., Madhukar, A. (1997) Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs. Physical Review Letters, 78 (21). 4071-4074 doi:10.1103/physrevlett.78.4071
Kobayashi, N. P., Ramachandran, T. R., Chen, P., Madhukar, A. (1996) In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001). Applied Physics Letters, 68 (23). 3299-3301 doi:10.1063/1.116580
Kalburge, A., Konkar, A., Ramachandran, T. R., Chen, P., Madhukar, A. (1997) Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth. Journal of Applied Physics, 82 (2). 859-864 doi:10.1063/1.365785
Heitz, R., Born, H., Hoffmann, A., Bimberg, D., Mukhametzhanov, I., Madhukar, A. (2000) Resonant Raman scattering in self-organized InAs/GaAs quantum dots. Applied Physics Letters, 77 (23). 3746-3748 doi:10.1063/1.1329321
Ko, Hyun-Chul, Park, Doo-Cheol, Kawakami, Yoichi, Fujita, Shizuo, Fujita, Shigeo (1997) Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski–Krastanow growth mode. Applied Physics Letters, 70 (24). 3278-3280 doi:10.1063/1.118427
Xie, Qianghua, Chen, P., Madhukar, A. (1994) InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth. Applied Physics Letters, 65 (16). 2051-2053 doi:10.1063/1.112790
Ponchet, Anne, Pedesseau, Laurent, Le Corre, Alain, Cornet, Charles, Bertru, Nicolas (2019) Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate. Applied Physics Letters, 114 (17). 173102pp. doi:10.1063/1.5091058
Seifert, W., Carlsson, N., Petersson, A., Wernersson, L.‐E., Samuelson, L. (1996) Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces. Applied Physics Letters, 68 (12). 1684-1686 doi:10.1063/1.115905
Madhukar, A., Xie, Q., Chen, P., Konkar, A. (1994) Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100). Applied Physics Letters, 64 (20). 2727-2729 doi:10.1063/1.111456
 
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