Vote for your favorite mineral in #MinCup25! - Carpathite vs. Leucite
Brace for oddness in a match between one of the very few hydrocarbon minerals carpathite and the temperature-flipping mineral leucite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lu, Xiang, Cheung, Nathan W., Strathman, Michael D., Chu, Paul K., Doyle, Brian (1997) Hydrogen induced silicon surface layer cleavage. Applied Physics Letters, 71 (13). 1804-1806 doi:10.1063/1.119404

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHydrogen induced silicon surface layer cleavage
JournalApplied Physics Letters
AuthorsLu, XiangAuthor
Cheung, Nathan W.Author
Strathman, Michael D.Author
Chu, Paul K.Author
Doyle, BrianAuthor
Year1997 (September 29)Volume71
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.119404Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8519504Long-form Identifiermindat:1:5:8519504:4
GUID0
Full ReferenceLu, Xiang, Cheung, Nathan W., Strathman, Michael D., Chu, Paul K., Doyle, Brian (1997) Hydrogen induced silicon surface layer cleavage. Applied Physics Letters, 71 (13). 1804-1806 doi:10.1063/1.119404
Plain TextLu, Xiang, Cheung, Nathan W., Strathman, Michael D., Chu, Paul K., Doyle, Brian (1997) Hydrogen induced silicon surface layer cleavage. Applied Physics Letters, 71 (13). 1804-1806 doi:10.1063/1.119404
In(1997, September) Applied Physics Letters Vol. 71 (13) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Lu, Xiang, Iyer, S. Sundar Kumar, Hu, Chenming, Cheung, Nathan W., Min, Jing, Fan, Zhineng, Chu, Paul K. (1997) Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation. Applied Physics Letters, 71 (19). 2767-2769 doi:10.1063/1.120127
Lu, Xiang, Iyer, S. Sundar Kumar, Liu, Jingbao, Hu, Chenming, Cheung, Nathan W., Min, Jing, Chu, Paul K. (1997) Separation of plasma implantation of oxygen to form silicon on insulator. Applied Physics Letters, 70 (13). 1748-1750 doi:10.1063/1.118645
Fan, Zhineng, Chu, Paul K., Chan, Chung, Cheung, Nathan W. (1998) Sample stage induced dose and energy nonuniformity in plasma immersion ion implantation of silicon. Applied Physics Letters, 73 (2). 202-204 doi:10.1063/1.121755
Lu, Xiang, Cheung, Nathan W. (1996) Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation. Applied Physics Letters, 69 (13). 1915-1917 doi:10.1063/1.117620
Han, Weihua, Yu, Jinzhong (2001) Thermodynamic model of hydrogen-induced silicon surface layer cleavage. Journal of Applied Physics, 89 (11). 6551-6553 doi:10.1063/1.1370109
Wang, Lianwei, Fu, Ricky K. Y., Zeng, Xuchu, Chu, Paul K., Cheung, W. Y., Wong, S. P. (2001) Damage in hydrogen plasma implanted silicon. Journal of Applied Physics, 90 (4). 1735-1739 doi:10.1063/1.1389073
Lu, Y. F., Yu, J. J., Choi, W. K. (1997) Theoretical analysis of laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces. Applied Physics Letters, 71 (23). 3439-3440 doi:10.1063/1.120359
Liu, Jingbao, Sundar Kumar Iyer, S., Hu, Chenming, Cheung, Nathan W., Gronsky, Ron, Min, Jing, Chu, Paul (1995) Formation of buried oxide in silicon using separation by plasma implantation of oxygen. Applied Physics Letters, 67 (16). 2361-2363 doi:10.1063/1.114345
Saitoh, K., Kondo, M., Fukawa, M., Nishimiya, T., Matsuda, A., Futako, W., Shimizu, I. (1997) Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon. Applied Physics Letters, 71 (23). 3403-3405 doi:10.1063/1.120324
Varma, C. M. (1997) Hydrogen-implant induced exfoliation of silicon and other crystals. Applied Physics Letters, 71 (24). 3519-3521 doi:10.1063/1.120378
Byrne, P. F., Cheung, N. W., Sadana, D. K. (1982) Damage induced through megavolt arsenic implantation into silicon. Applied Physics Letters, 41 (6). 537-539 doi:10.1063/1.93581
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 6, 2025 19:16:02
Go to top of page