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Rapaport, R., Lubianiker, Y., Balberg, I., Fonseca, L. (1998) Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon. Applied Physics Letters, 72 (1). 103-105 doi:10.1063/1.120658

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Reference TypeJournal (article/letter/editorial)
TitleSensitization of the minority carrier lifetime in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsRapaport, R.Author
Lubianiker, Y.Author
Balberg, I.Author
Fonseca, L.Author
Year1998 (January 5)Volume72
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.120658Search in ResearchGate
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Mindat Ref. ID8520589Long-form Identifiermindat:1:5:8520589:1
GUID0
Full ReferenceRapaport, R., Lubianiker, Y., Balberg, I., Fonseca, L. (1998) Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon. Applied Physics Letters, 72 (1). 103-105 doi:10.1063/1.120658
Plain TextRapaport, R., Lubianiker, Y., Balberg, I., Fonseca, L. (1998) Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon. Applied Physics Letters, 72 (1). 103-105 doi:10.1063/1.120658
In(1998, January) Applied Physics Letters Vol. 72 (1) AIP Publishing

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Lubianiker, Y., Balberg, I., Fonseca, L. F. (1997) Thermal quenching of the minority-carrier lifetime in a-Si:H. Physical Review B, 55 (24) doi:10.1103/physrevb.55.r15997
Balberg, I, Lubianiker, Y, Fonseca, L, Weisz, S.Z (1998) The light intensity exponent of the minority carrier lifetime and the mobility gap states in a-Si:H. Journal of Non-Crystalline Solids, 227. 206-210 doi:10.1016/s0022-3093(98)00049-0
Balberg, I., Naidis, R. (1998) Sensitization of the minority-carrier lifetime in a photoconductor. Physical Review B, 57 (12) doi:10.1103/physrevb.57.r6783
Crandall, Richard S., Balberg, I. (1991) Mobility‐lifetime products in hydrogenated amorphous silicon. Applied Physics Letters, 58 (5). 508-510 doi:10.1063/1.104622
Lubianiker, Y, Balberg, I (1998) A comparative study of the Meyer–Neldel rule in porous silicon and hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 180-184 doi:10.1016/s0022-3093(98)00038-6
Balberg, I. (1994) The two carriers’ mobility‐lifetime products and their light intensity dependencies in hydrogenated amorphous silicon. Journal of Applied Physics, 75 (2). 914-923 doi:10.1063/1.356447
Balberg, I., Weisz, S. Z. (1991) Accurate determination of the two carriers steady‐state mobility‐lifetime products in hydrogenated amorphous silicon. Journal of Applied Physics, 70 (4). 2204-2207 doi:10.1063/1.349459
Fefer, E., Shapira, Y., Balberg, I. (1995) Direct determination of the band‐gap states in hydrogenated amorphous silicon using surface photovoltage spectroscopy. Applied Physics Letters, 67 (3). 371-373 doi:10.1063/1.114632
Balberg, I., Epstein, K. A., Ritter, D. (1989) Ambipolar diffusion length measurements in hydrogenated amorphous silicon. Applied Physics Letters, 54 (24). 2461-2463 doi:10.1063/1.101072
Gupta, S., Katiyar, R. S., Morell, G., Weisz, S. Z., Balberg, I. (1999) The effect of hydrogen on the network disorder in hydrogenated amorphous silicon. Applied Physics Letters, 75 (18). 2803-2805 doi:10.1063/1.125155
Balberg, I., Weisz, S. Z. (1991) Identification of nonambipolar transport in the application of a photocarrier grating to hydrogenated amorphous silicon. Applied Physics Letters, 59 (14). 1726-1728 doi:10.1063/1.106231
 
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