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Nikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., Chin, A. K. (1998) Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Applied Physics Letters, 72 (19). 2361-2363 doi:10.1063/1.121357

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Reference TypeJournal (article/letter/editorial)
TitleGas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
JournalApplied Physics Letters
AuthorsNikishin, S. A.Author
Temkin, H.Author
Antipov, V. G.Author
Guriev, A. I.Author
Zubrilov, A. S.Author
Elyukhin, V. A.Author
Faleev, N. N.Author
Kyutt, R. N.Author
Chin, A. K.Author
Year1998 (May 11)Volume72
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.121357Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8520997Long-form Identifiermindat:1:5:8520997:6
GUID0
Full ReferenceNikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., Chin, A. K. (1998) Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Applied Physics Letters, 72 (19). 2361-2363 doi:10.1063/1.121357
Plain TextNikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., Chin, A. K. (1998) Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Applied Physics Letters, 72 (19). 2361-2363 doi:10.1063/1.121357
In(1998, May) Applied Physics Letters Vol. 72 (19) AIP Publishing

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Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., Temkin, H. (2000) Growth of AlGaN on Si(111) by gas source molecular beam epitaxy. Applied Physics Letters, 76 (21). 3028-3030 doi:10.1063/1.126568
Nikishin, S. A., Antipov, V. G., Francoeur, S., Faleev, N. N., Seryogin, G. A., Elyukhin, V. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Konkar, A., Zollner, S. (1999) High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. Applied Physics Letters, 75 (4). 484-486 doi:10.1063/1.124423
Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Grave de Peralta, L., Seryogin, G. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Chu, S. N. G. (1999) High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Applied Physics Letters, 75 (14). 2073-2075 doi:10.1063/1.124920
Nikishin, S. A., Antipov, V. G., Ruvimov, S. S., Seryogin, G. A., Temkin, H. (1996) Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine. Applied Physics Letters, 69 (21). 3227-3229 doi:10.1063/1.118018
Zubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M. (2002) Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia. Journal of Applied Physics, 91 (3). 1209-1212 doi:10.1063/1.1430535
Elyukhin, V. A., GarcıĢa-Salgado, G., PeƱa-Sierra, R., Nikishin, S. A. (2003) Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine. Journal of Applied Physics, 93 (9). 5185-5190 doi:10.1063/1.1565495
Qiu, Y., Nikishin, S. A., Temkin, H., Faleev, N. N., Kudriavtsev, Yu. A. (1997) Growth of single phase GaAs1āˆ’xNx with high nitrogen concentration by metalā€“organic molecular beam epitaxy. Applied Physics Letters, 70 (24). 3242-3244 doi:10.1063/1.119137
Seon, M., Prokofyeva, T., Holtz, M., Nikishin, S. A., Faleev, N. N., Temkin, H. (2000) Selective growth of high quality GaN on Si(111) substrates. Applied Physics Letters, 76 (14). 1842-1844 doi:10.1063/1.126186
Qiu, Y., Jin, C., Francoeur, S., Nikishin, S. A., Temkin, H. (1998) Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine. Applied Physics Letters, 72 (16). 1999-2001 doi:10.1063/1.121245
Nikishin, S. A., Borisov, B. A., Chandolu, A., Kuryatkov, V. V., Temkin, H., Holtz, M., Mokhov, E. N., Makarov, Yu., Helava, H. (2004) Short-period superlattices of AlNāˆ•Al[sub 0.08]Ga[sub 0.92]N grown on AlN substrates. Applied Physics Letters, 85 (19). 4355pp. doi:10.1063/1.1815056
Jin, C., Nikishin, S. A., Kuchinskii, V. I., Temkin, H., Holtz, M. (2002) Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine. Journal of Applied Physics, 91 (1). 56pp. doi:10.1063/1.1419206
 
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