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Kopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M. (1998) Materials integration of gallium arsenide and silicon by wafer bonding. Applied Physics Letters, 72 (24). 3181-3183 doi:10.1063/1.121586

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Reference TypeJournal (article/letter/editorial)
TitleMaterials integration of gallium arsenide and silicon by wafer bonding
JournalApplied Physics Letters
AuthorsKopperschmidt, P.Author
Senz, S.Author
Kästner, G.Author
Hesse, D.Author
Gösele, U. M.Author
Year1998 (June 15)Volume72
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.121586Search in ResearchGate
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Mindat Ref. ID8521314Long-form Identifiermindat:1:5:8521314:6
GUID0
Full ReferenceKopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M. (1998) Materials integration of gallium arsenide and silicon by wafer bonding. Applied Physics Letters, 72 (24). 3181-3183 doi:10.1063/1.121586
Plain TextKopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M. (1998) Materials integration of gallium arsenide and silicon by wafer bonding. Applied Physics Letters, 72 (24). 3181-3183 doi:10.1063/1.121586
In(1998, June) Applied Physics Letters Vol. 72 (24) AIP Publishing

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Kopperschmidt, P., Kästner, G., Hesse, D., Zakharov, N. D., Gösele, U. (1997) High bond energy and thermomechanical stress in silicon on sapphire wafer bonding. Applied Physics Letters, 70 (22). 2972-2974 doi:10.1063/1.118760
Alexe, Marin, Kästner, Gerhard, Hesse, Dietrich, Gösele, Ulrich (1997) Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding. Applied Physics Letters, 70 (25). 3416-3418 doi:10.1063/1.119189
Kopperschmidt, P., Senz, St., Scholz, R., Gösele, U. (1999) “Compliant” twist-bonded GaAs substrates: The potential role of pinholes. Applied Physics Letters, 74 (3). 374-376 doi:10.1063/1.123075
Schubert, M. A., Senz, S., Alexe, M., Hesse, D., Gösele, U. (2008) Finite element method calculations of ZnO nanowires for nanogenerators. Applied Physics Letters, 92 (12). 122904pp. doi:10.1063/1.2903114
Fecioru, Alin Mihai, Senz, Stephan, Scholz, Roland, Gösele, Ulrich (2006) Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuum. Applied Physics Letters, 89 (19). 192109pp. doi:10.1063/1.2387410
Reznicek, A., Scholz, R., Senz, S., Gösele, U. (2003) Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding. Materials Chemistry and Physics, 81. 277-280 doi:10.1016/s0254-0584(02)00601-6
Alexe, M., Scholz, R., Kästner, G., Pignolet, A., Gösele, U. (1998) Direct wafer bonding : A new fabrication method for ferroelectric-silicon heterostructures. Le Journal de Physique IV, 8. doi:10.1051/jp4:1998946
Tong, Q.‐Y., Schmidt, E., Gösele, U., Reiche, M. (1994) Hydrophobic silicon wafer bonding. Applied Physics Letters, 64 (5). 625-627 doi:10.1063/1.111070
Alexe, M., Hesse, D., Schmidt, V., Senz, S., Fan, H. J., Zacharias, M., Gösele, U. (2006) Ferroelectric nanotubes fabricated using nanowires as positive templates. Applied Physics Letters, 89 (17). 172907pp. doi:10.1063/1.2364260
Alexe, M., Hesse, D., Gösele, U. (1998) Deposition and processing of bismuth titanate thin films for direct wafer bonding. Materials Chemistry and Physics, 55. 55-60 doi:10.1016/s0254-0584(98)00090-x
Himcinschi, C., Reiche, M., Scholz, R., Christiansen, S. H., Gösele, U. (2007) Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer. Applied Physics Letters, 90 (23). 231909pp. doi:10.1063/1.2747182
 
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