| Reference Type | Journal (article/letter/editorial) |
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| Title | Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge |
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| Journal | Applied Physics Letters |
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| Authors | Scofield, J. D. | Author |
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| Bletzinger, P. | Author |
| Ganguly, B. N. | Author |
| Year | 1998 (July 6) | Volume | 73 |
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| Issue | 1 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.121728Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8521723 | Long-form Identifier | mindat:1:5:8521723:0 |
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| GUID | 0 |
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| Full Reference | Scofield, J. D., Bletzinger, P., Ganguly, B. N. (1998) Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge. Applied Physics Letters, 73 (1). 76-78 doi:10.1063/1.121728 |
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| Plain Text | Scofield, J. D., Bletzinger, P., Ganguly, B. N. (1998) Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge. Applied Physics Letters, 73 (1). 76-78 doi:10.1063/1.121728 |
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| In | (1998, July) Applied Physics Letters Vol. 73 (1) AIP Publishing |
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