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Ong, T. P., Fiordalice, R., Venkatraman, R., Garcia, S., Jain, A., Sparks, T., Farkas, J., Fernandes, M., Gall, M., Jawarani, D., Klein, J., Weitzman, E., Kawasaki, H., Wu, Wei, Blumenthal, R., Pintchovski, F., Marsh, R., Zhang, P., Zhang, H., Guo, T., Mosely, R. (1998) Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications. Applied Physics Letters, 73 (1). 82-84 doi:10.1063/1.121731

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Reference TypeJournal (article/letter/editorial)
TitleVoid-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications
JournalApplied Physics Letters
AuthorsOng, T. P.Author
Fiordalice, R.Author
Venkatraman, R.Author
Garcia, S.Author
Jain, A.Author
Sparks, T.Author
Farkas, J.Author
Fernandes, M.Author
Gall, M.Author
Jawarani, D.Author
Klein, J.Author
Weitzman, E.Author
Kawasaki, H.Author
Wu, WeiAuthor
Blumenthal, R.Author
Pintchovski, F.Author
Marsh, R.Author
Zhang, P.Author
Zhang, H.Author
Guo, T.Author
Mosely, R.Author
Year1998 (July 6)Volume73
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.121731Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8521726Long-form Identifiermindat:1:5:8521726:7
GUID0
Full ReferenceOng, T. P., Fiordalice, R., Venkatraman, R., Garcia, S., Jain, A., Sparks, T., Farkas, J., Fernandes, M., Gall, M., Jawarani, D., Klein, J., Weitzman, E., Kawasaki, H., Wu, Wei, Blumenthal, R., Pintchovski, F., Marsh, R., Zhang, P., Zhang, H., Guo, T., Mosely, R. (1998) Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications. Applied Physics Letters, 73 (1). 82-84 doi:10.1063/1.121731
Plain TextOng, T. P., Fiordalice, R., Venkatraman, R., Garcia, S., Jain, A., Sparks, T., Farkas, J., Fernandes, M., Gall, M., Jawarani, D., Klein, J., Weitzman, E., Kawasaki, H., Wu, Wei, Blumenthal, R., Pintchovski, F., Marsh, R., Zhang, P., Zhang, H., Guo, T., Mosely, R. (1998) Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications. Applied Physics Letters, 73 (1). 82-84 doi:10.1063/1.121731
In(1998, July) Applied Physics Letters Vol. 73 (1) AIP Publishing


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