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Wang, Mingxiang, Chen, Kunji, He, Lei, Li, Wei, Xu, Jun, Huang, Xinfan (1998) Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film. Applied Physics Letters, 73 (1). 105-107 doi:10.1063/1.121782

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Reference TypeJournal (article/letter/editorial)
TitleGreen electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film
JournalApplied Physics Letters
AuthorsWang, MingxiangAuthor
Chen, KunjiAuthor
He, LeiAuthor
Li, WeiAuthor
Xu, JunAuthor
Huang, XinfanAuthor
Year1998 (July 6)Volume73
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.121782Search in ResearchGate
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Mindat Ref. ID8521729Long-form Identifiermindat:1:5:8521729:4
GUID0
Full ReferenceWang, Mingxiang, Chen, Kunji, He, Lei, Li, Wei, Xu, Jun, Huang, Xinfan (1998) Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film. Applied Physics Letters, 73 (1). 105-107 doi:10.1063/1.121782
Plain TextWang, Mingxiang, Chen, Kunji, He, Lei, Li, Wei, Xu, Jun, Huang, Xinfan (1998) Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film. Applied Physics Letters, 73 (1). 105-107 doi:10.1063/1.121782
In(1998, July) Applied Physics Letters Vol. 73 (1) AIP Publishing


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