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Rahman, F., Gallagher, B. L., Behet, M., De Boeck, J. (1998) Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Applied Physics Letters, 73 (1). 88-90 doi:10.1063/1.121789

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Reference TypeJournal (article/letter/editorial)
TitleGating of InAs/GaSb quantum wells using a silicon monoxide gate insulator
JournalApplied Physics Letters
AuthorsRahman, F.Author
Gallagher, B. L.Author
Behet, M.Author
De Boeck, J.Author
Year1998 (July 6)Volume73
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.121789Search in ResearchGate
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Mindat Ref. ID8521736Long-form Identifiermindat:1:5:8521736:4
GUID0
Full ReferenceRahman, F., Gallagher, B. L., Behet, M., De Boeck, J. (1998) Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Applied Physics Letters, 73 (1). 88-90 doi:10.1063/1.121789
Plain TextRahman, F., Gallagher, B. L., Behet, M., De Boeck, J. (1998) Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Applied Physics Letters, 73 (1). 88-90 doi:10.1063/1.121789
In(1998, July) Applied Physics Letters Vol. 73 (1) AIP Publishing

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Behet, M., De Boeck, J., Borghs, G., Mijlemans, P. (1999) Molecular beam epitaxial growth of InAs/(Al, Ga)Sb quantum-well structures on germanium substrates. Applied Physics Letters, 74 (22). 3371-3373 doi:10.1063/1.123348
Eroms, J., Zitzlsperger, M., Weiss, D., Smet, J.H., Albrecht, C., Fleischmann, R., Behet, M., De Boeck, J., Borghs, G. (1998) Magnetotransport in large diameter InAs/GaSb antidot lattices. Physica B: Condensed Matter, 256. 409-412 doi:10.1016/s0921-4526(98)00502-x
Eroms, J., Zitzlsperger, M., Weiss, D., Smet, J. H., Albrecht, C., Fleischmann, R., Behet, M., De Boeck, J., Borghs, G. (1999) Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices. Physical Review B, 59 (12) doi:10.1103/physrevb.59.r7829
Bennett, Brian R., Yang, M. J., Shanabrook, B. V., Boos, J. B., Park, D. (1998) Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers. Applied Physics Letters, 72 (10). 1193-1195 doi:10.1063/1.121010
Bekaert, J., Moshchalkov, V. V., Bruynseraede, Y., Behet, M., De Boeck, J., Borghs, G. (1999) InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability. Review of Scientific Instruments, 70 (6). 2715-2718 doi:10.1063/1.1149834
Geddo, M., Ferrini, R., Patrini, M., Franchi, S., Baraldi, A., Magnanini, R. (1998) Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells. Applied Physics Letters, 73 (9). 1254-1256 doi:10.1063/1.122143
Chen, J. F., Cho, A. Y. (1992) Interband tunneling between valenceā€band and conductionā€band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs tripleā€barrier structure. Journal of Applied Physics, 72 (3). 960-963 doi:10.1063/1.351772
Xu, W., Wei, X. F., Zhang, J. (2008) Exchange-induced terahertz minigap in InAsāˆ•GaSb type II and broken-gap quantum wells. Applied Physics Letters, 92 (16). 162108pp. doi:10.1063/1.2913757
Bennett, Brian R. (1998) Strain relaxation in InAs/GaSb heterostructures. Applied Physics Letters, 73 (25). 3736-3738 doi:10.1063/1.122878
Longenbach, K. F., Luo, L. F., Wang, W. I. (1990) Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures. Applied Physics Letters, 57 (15). 1554-1556 doi:10.1063/1.103351
Folkes, P. A., Gumbs, Godfrey, Xu, Wen, Taysing-Lara, M. (2006) Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSbā€“InAsā€“AlSb quantum wells. Applied Physics Letters, 89 (20). 202113pp. doi:10.1063/1.2388147
 
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