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Hu, Xinwen, Fang, Jiaxiong, Wang, Qin, Zhao, Jun, Lu, Huiqing, Gong, Haimei, Zhang, Shengkun, Lu, Fang (1998) A deep level induced by gamma irradiation in Hg1−xCdxTe. Applied Physics Letters, 73 (1). 91-92 doi:10.1063/1.121790

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Reference TypeJournal (article/letter/editorial)
TitleA deep level induced by gamma irradiation in Hg1−xCdxTe
JournalApplied Physics Letters
AuthorsHu, XinwenAuthor
Fang, JiaxiongAuthor
Wang, QinAuthor
Zhao, JunAuthor
Lu, HuiqingAuthor
Gong, HaimeiAuthor
Zhang, ShengkunAuthor
Lu, FangAuthor
Year1998 (July 6)Volume73
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.121790Search in ResearchGate
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Mindat Ref. ID8521737Long-form Identifiermindat:1:5:8521737:3
GUID0
Full ReferenceHu, Xinwen, Fang, Jiaxiong, Wang, Qin, Zhao, Jun, Lu, Huiqing, Gong, Haimei, Zhang, Shengkun, Lu, Fang (1998) A deep level induced by gamma irradiation in Hg1−xCdxTe. Applied Physics Letters, 73 (1). 91-92 doi:10.1063/1.121790
Plain TextHu, Xinwen, Fang, Jiaxiong, Wang, Qin, Zhao, Jun, Lu, Huiqing, Gong, Haimei, Zhang, Shengkun, Lu, Fang (1998) A deep level induced by gamma irradiation in Hg1−xCdxTe. Applied Physics Letters, 73 (1). 91-92 doi:10.1063/1.121790
In(1998, July) Applied Physics Letters Vol. 73 (1) AIP Publishing

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Zhao, Jianhua, Li, Xiangyang, Liu, Hua, Jiang, Runqing, Liu, Zhaopeng, Hu, Zhihan, Gong, Haimei, Fang, Jiaxiong (1999) Damage threshold of HgCdTe induced by continuous-wave CO2 laser. Applied Physics Letters, 74 (8). 1081-1083 doi:10.1063/1.123488
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Cao, Guangming, Gong, Haimei, Qiu, Huiguo, Kong, Lingcai, Hu, S. H., Dai, N. (2005) Bias-dependent photocurrent of Hg1−xCdxTe photodiodes. Journal of Applied Physics, 98 (6). 64504pp. doi:10.1063/1.2043235
Fang, Z.-Q., Hemsky, J. W., Look, D. C., Mack, M. P. (1998) Electron-irradiation-induced deep level in n-type GaN. Applied Physics Letters, 72 (4). 448-449 doi:10.1063/1.120783
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Yue, Fangyu, Chu, Junhao, Wu, Jun, Hu, Zhigao, Li, Yawei, Yang, Pingxiong (2008) Modulated photoluminescence of shallow levels in arsenic-doped Hg1−xCdxTe (x≈0.3) grown by molecular beam epitaxy. Applied Physics Letters, 92 (12). 121916pp. doi:10.1063/1.2903499
Zhang, Sheng-kun, Jiang, Zui-min, Qin, Jie, Hu, Dong-zhi, Lu, Fang, Wang, Xun (1998) Well depth fluctuation of Si1−xGex/Si quantum well structures studied by conductance–voltage technique. Journal of Applied Physics, 84 (10). 5587-5592 doi:10.1063/1.368603
 
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