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Yang, Z., Chen, Y. H., Wong, Yuqi (1998) Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs. Applied Physics Letters, 73 (11). 1520-1522 doi:10.1063/1.122192

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Reference TypeJournal (article/letter/editorial)
TitleComparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs
JournalApplied Physics Letters
AuthorsYang, Z.Author
Chen, Y. H.Author
Wong, YuqiAuthor
Year1998 (September 14)Volume73
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.122192Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8521812Long-form Identifiermindat:1:5:8521812:3
GUID0
Full ReferenceYang, Z., Chen, Y. H., Wong, Yuqi (1998) Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs. Applied Physics Letters, 73 (11). 1520-1522 doi:10.1063/1.122192
Plain TextYang, Z., Chen, Y. H., Wong, Yuqi (1998) Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs. Applied Physics Letters, 73 (11). 1520-1522 doi:10.1063/1.122192
In(1998, September) Applied Physics Letters Vol. 73 (11) AIP Publishing

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Lin, Y., Zhao, B. R., Peng, H. B., Xu, B., Chen, H., Wu, F., Tao, H. J., Zhao, Z. X., Chen, J. S. (1998) Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer. Applied Physics Letters, 73 (19). 2781-2783 doi:10.1063/1.122589
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