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Bera, L. K., Banerjee, H. D., Ray, S. K., Mukhopadhyay, M., Maiti, C. K. (1998) Microwave plasma nitridation of silicon dioxide on strained Si. Applied Physics Letters, 73 (11). 1559-1561 doi:10.1063/1.122204

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Reference TypeJournal (article/letter/editorial)
TitleMicrowave plasma nitridation of silicon dioxide on strained Si
JournalApplied Physics Letters
AuthorsBera, L. K.Author
Banerjee, H. D.Author
Ray, S. K.Author
Mukhopadhyay, M.Author
Maiti, C. K.Author
Year1998 (September 14)Volume73
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.122204Search in ResearchGate
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Mindat Ref. ID8521824Long-form Identifiermindat:1:5:8521824:8
GUID0
Full ReferenceBera, L. K., Banerjee, H. D., Ray, S. K., Mukhopadhyay, M., Maiti, C. K. (1998) Microwave plasma nitridation of silicon dioxide on strained Si. Applied Physics Letters, 73 (11). 1559-1561 doi:10.1063/1.122204
Plain TextBera, L. K., Banerjee, H. D., Ray, S. K., Mukhopadhyay, M., Maiti, C. K. (1998) Microwave plasma nitridation of silicon dioxide on strained Si. Applied Physics Letters, 73 (11). 1559-1561 doi:10.1063/1.122204
In(1998, September) Applied Physics Letters Vol. 73 (11) AIP Publishing

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Bera, L. K., Mukhopadhyay, M., Ray, S. K., Nayak, D. K., Usami, N., Shiraki, Y., Maiti, C. K. (1997) Oxidation of strained Si in a microwave electron cyclotron resonance plasma. Applied Physics Letters, 70 (2). 217-219 doi:10.1063/1.118370
Bera, L K, Ray, S K, Banerjee, H D, Maiti, C K (1998) Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate. Bulletin of Materials Science, 21. 283-286 doi:10.1007/bf02744953
Bera, L. K., Ray, S. K., Nayak, D. K., Usami, N., Shiraki, Y., Maiti, C. K. (1997) Electrical properties of oxides grown on strained Si using microwave N2O plasma. Applied Physics Letters, 70 (1). 66-68 doi:10.1063/1.119308
Mukhopadhyay, M., Ray, S. K., Maiti, C. K., Nayak, D. K., Shiraki, Y. (1994) Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma. Applied Physics Letters, 65 (7). 895-897 doi:10.1063/1.112193
Ray, S. K., Bera, L. K., Maiti, C. K., John, S., Banerjee, S. K. (1998) Electrical characteristics of plasma oxidized Si1−x−yGexCy metal–oxide–semiconductor capacitors. Applied Physics Letters, 72 (10). 1250-1252 doi:10.1063/1.121028
Chattopadhyay, S., Bera, L. K., Ray, S. K., Maiti, C. K. (1997) Pt/p-strained-Si Schottky diode characteristics at low temperature. Applied Physics Letters, 71 (7). 942-944 doi:10.1063/1.119696
Samanta, S. K., Chatterjee, S., Bera, L. K., Banerjee, H. D., Maiti, C. K. (2002) Temperature dependence of electrical properties of N2O/O2/N2O-grown oxides on strained SiGe. Applied Physics Letters, 80 (14). 2547-2549 doi:10.1063/1.1469221
Mukhopadhyay, M., Ray, S. K., Nayak, D. K., Maiti, C. K. (1996) Ultrathin oxides using N2O on strained Si1−xGex layers. Applied Physics Letters, 68 (9). 1262-1264 doi:10.1063/1.115946
Mukhopadhyay, M., Ray, S. K., Maiti, C. K., Nayak, D. K., Shiraki, Y. (1995) Erratum: ‘‘Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma’’ [Appl. Phys. Lett. 65, 895 (1994)]. Applied Physics Letters, 66 (12). 1566 doi:10.1063/1.114225
Senapati, B., Samanta, S. K., Maikap, S., Bera, L. K., Maiti, C. K. (2000) Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si[sub 1−x]Ge[sub x] layers. Applied Physics Letters, 77 (12). 1840pp. doi:10.1063/1.1311311
Samanta, S. K., Chatterjee, S., Maikap, S., Bera, L. K., Banerjee, H. D., Maiti, C. K. (2003) Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates. Journal of Applied Physics, 93 (5). 2464-2471 doi:10.1063/1.1540224
 
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