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Kobayashi, Nobuhiko P., Kobayashi, Junko T., Choi, Won-Jin, Dapkus, P. Daniel (1998) Single-crystal α-GaN grown on a α-Ga2O3 template layer. Applied Physics Letters, 73 (11). 1553-1555 doi:10.1063/1.122218

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Reference TypeJournal (article/letter/editorial)
TitleSingle-crystal α-GaN grown on a α-Ga2O3 template layer
JournalApplied Physics Letters
AuthorsKobayashi, Nobuhiko P.Author
Kobayashi, Junko T.Author
Choi, Won-JinAuthor
Dapkus, P. DanielAuthor
Year1998 (September 14)Volume73
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.122218Search in ResearchGate
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Mindat Ref. ID8521838Long-form Identifiermindat:1:5:8521838:1
GUID0
Full ReferenceKobayashi, Nobuhiko P., Kobayashi, Junko T., Choi, Won-Jin, Dapkus, P. Daniel (1998) Single-crystal α-GaN grown on a α-Ga2O3 template layer. Applied Physics Letters, 73 (11). 1553-1555 doi:10.1063/1.122218
Plain TextKobayashi, Nobuhiko P., Kobayashi, Junko T., Choi, Won-Jin, Dapkus, P. Daniel (1998) Single-crystal α-GaN grown on a α-Ga2O3 template layer. Applied Physics Letters, 73 (11). 1553-1555 doi:10.1063/1.122218
In(1998, September) Applied Physics Letters Vol. 73 (11) AIP Publishing

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Kobayashi, Nobuhiko P, Junko T. Kobayashi, , Choi, Won-Jin, Daniel Dapkus, P, Zhang, Xingang, H. Rich, Daniel (1998) Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer. Journal of Crystal Growth, 189. 172-177 doi:10.1016/s0022-0248(98)00221-8
Kobayashi, Nobuhiko P., Kobayashi, Junko T., Zhang, Xingang, Dapkus, P. Daniel, Rich, Daniel H. (1999) Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate. Applied Physics Letters, 74 (19). 2836-2838 doi:10.1063/1.124030
Kobayashi, N. P., Kobayashi, J. T., Dapkus, P. D., Choi, W.-J., Bond, A. E., Zhang, X., Rich, D. H. (1997) GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer. Applied Physics Letters, 71 (24). 3569-3571 doi:10.1063/1.120394
Choi, Won-Jin, Dapkus, P. Daniel (1998) Self-defined AlAs-oxide–current-aperture buried heterostructure vertical cavity surface-emitting laser. Applied Physics Letters, 73 (12). 1661-1663 doi:10.1063/1.122238
Zhang, X., Rich, D. H., Kobayashi, J. T., Kobayashi, N. P., Dapkus, P. D. (1998) Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence. Applied Physics Letters, 73 (10). 1430-1432 doi:10.1063/1.121966
Ren, Dawei, Zhou, Wei, Dapkus, P. Daniel (2005) Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth. Applied Physics Letters, 86 (11). 111901pp. doi:10.1063/1.1866502
Lohn, Andrew J., Li, Xuema, Kobayashi, Nobuhiko P. (2011) Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer. Journal of Crystal Growth, 315 (1). 157-159 doi:10.1016/j.jcrysgro.2010.08.050
Ren, Dawei, Dapkus, P. Daniel (2005) Anisotropic Mg incorporation in GaN growth on nonplanar templates. Applied Physics Letters, 86 (12). 121901pp. doi:10.1063/1.1870121
Remeika, J. P., Marezio, M. (1966) GROWTH OF α‐Ga2O3 SINGLE CRYSTALS AT 44 KBARS. Applied Physics Letters, 8 (4). 87-88 doi:10.1063/1.1754500
Choi, Won-Jin, Daniel Dapkus, P (1998) Selective growth and regrowth of high Al content AlGaAs for use in BH lasers. Journal of Crystal Growth, 195 (1). 495-502 doi:10.1016/s0022-0248(98)00682-4
Kobayashi, H., Gibson, W. M. (1998) Lattice location of Si in ion implanted GaN. Applied Physics Letters, 73 (10). 1406-1408 doi:10.1063/1.121958
 
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