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Moeckly, B. H., Char, K. (1998) Response to ‘Comment on “Properties of interface-engineered high Tc Josephson junctions” ’ [Appl. Phys. Lett. 73, 1745 (1998)]. Applied Physics Letters, 73 (12). 1747 doi:10.1063/1.122265

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘Comment on “Properties of interface-engineered high Tc Josephson junctions” ’ [Appl. Phys. Lett. 73, 1745 (1998)]
JournalApplied Physics Letters
AuthorsMoeckly, B. H.Author
Char, K.Author
Year1998 (September 21)Volume73
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.122265Search in ResearchGate
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Mindat Ref. ID8521885Long-form Identifiermindat:1:5:8521885:9
GUID0
Full ReferenceMoeckly, B. H., Char, K. (1998) Response to ‘Comment on “Properties of interface-engineered high Tc Josephson junctions” ’ [Appl. Phys. Lett. 73, 1745 (1998)]. Applied Physics Letters, 73 (12). 1747 doi:10.1063/1.122265
Plain TextMoeckly, B. H., Char, K. (1998) Response to ‘Comment on “Properties of interface-engineered high Tc Josephson junctions” ’ [Appl. Phys. Lett. 73, 1745 (1998)]. Applied Physics Letters, 73 (12). 1747 doi:10.1063/1.122265
In(1998, September) Applied Physics Letters Vol. 73 (12) AIP Publishing

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Tinchev, S. S., Alexandrova, S. (1998) Comment on “Properties of interface-engineered high Tc Josephson junctions” [Appl. Phys. Lett. 71, 2526 (1997)]. Applied Physics Letters, 73 (12). 1745-1746 doi:10.1063/1.122264
Moeckly, B. H., Char, K. (1997) Properties of interface-engineered high Tc Josephson junctions. Applied Physics Letters, 71 (17). 2526-2528 doi:10.1063/1.120107
Moeckly, B. H. (2001) Erratum: “All Ya–Ba–Cu–O c-axis trilayer interface-engineered Josephson junctions” [Appl. Phys. Lett. 78, 790 (2001)]. Applied Physics Letters, 78 (19). 2988 doi:10.1063/1.1370955
Char, K., Antognazza, L., Geballe, T. H. (1995) Response to ‘‘Comment on ‘Properties of YBa2Cu3O7−x/ YBa2Cu2.79Co0.21O7−x/YBa2Cu3O7−x edge junctions’ ’’ [Appl. Phys. Lett. 66, 394 (1995)]. Applied Physics Letters, 66 (3). 395 doi:10.1063/1.114200
Vlasov, Yu. A., Luterova, K., Pelant, I., Hönerlage, B., Astratov, V. N. (1998) Response to “Comment on ‘Enhancement of the optical gain of semiconductors embedded in three-dimensional photonic crystals’ ” [Appl. Phys. Lett. 73, 550 (1997)]. Applied Physics Letters, 73 (4). 552 doi:10.1063/1.122271
Fu, Huaxiang, Wang, Lin-Wang, Zunger, Alex (1998) Response to “Comment on ‘Comparison of the k⋅p and the direct diagonalization approaches for describing the electronic structure of quantum dots’ ” [Appl. Phys. Lett. 73, 1155 (1998)]. Applied Physics Letters, 73 (8). 1157-1158 doi:10.1063/1.122155
Zahner, Th., Förg, R., Lengfellner, H. (1998) Erratum: “Transverse thermoelectric response of a tilted metallic multilayer structure” [Appl. Phys. Lett. 73, 1364 (1998)]. Applied Physics Letters, 73 (15). 2221 doi:10.1063/1.122438
Beyer, T., Tacke, M. (1998) Erratum: “Antireflection coatings for PbSe diode lasers” [Appl. Phys. Lett. 73, 1191 (1998)]. Applied Physics Letters, 73 (15). 2218 doi:10.1063/1.122430
Moeckly, B. H. (2001) All Ya–Ba–Cu–Oc-axis trilayer interface-engineered Josephson junctions. Applied Physics Letters, 78 (6). 790-792 doi:10.1063/1.1345821
Lettieri, J., Weber, C. I., Schlom, D. G. (1998) Comment on “Control of epitaxial growth for SrBi2Ta2O9 thin films” [Appl. Phys. Lett. 72, 665 (1998)]. Applied Physics Letters, 73 (14). 2057-2058 doi:10.1063/1.122561
Levine, B. F. (1999) Comment on “Noise gain and detectivity of n-type GaAs/AlAs/AlGaAs quantum well infrared photodetectors” [Appl. Phys. Lett. 73, 1251 (1998)]. Applied Physics Letters, 74 (6). 892 doi:10.1063/1.123957
 
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