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Wu, J., Yaguchi, H., Onabe, K., Shiraki, Y. (1998) Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate. Applied Physics Letters, 73 (14). 1931-1933 doi:10.1063/1.122326

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Reference TypeJournal (article/letter/editorial)
TitleCleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate
JournalApplied Physics Letters
AuthorsWu, J.Author
Yaguchi, H.Author
Onabe, K.Author
Shiraki, Y.Author
Year1998 (October 5)Volume73
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.122326Search in ResearchGate
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Mindat Ref. ID8521946Long-form Identifiermindat:1:5:8521946:9
GUID0
Full ReferenceWu, J., Yaguchi, H., Onabe, K., Shiraki, Y. (1998) Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate. Applied Physics Letters, 73 (14). 1931-1933 doi:10.1063/1.122326
Plain TextWu, J., Yaguchi, H., Onabe, K., Shiraki, Y. (1998) Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate. Applied Physics Letters, 73 (14). 1931-1933 doi:10.1063/1.122326
In(1998, October) Applied Physics Letters Vol. 73 (14) AIP Publishing

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Wu, Jun, Yaguchi, Hiroyuki, Onabe, Kentaro, Shiraki, Yasuhiro (1999) Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures. Journal of Crystal Growth, 197 (1). 73-77 doi:10.1016/s0022-0248(98)00945-2
Wu, J., Yaguchi, H., Onabe, K., Ito, R., Shiraki, Y. (1997) Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy. Applied Physics Letters, 71 (15). 2067-2069 doi:10.1063/1.119344
Nakadaira, Atsushi, Tanaka, Hidenao (1997) Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy. Applied Physics Letters, 71 (6). 812-814 doi:10.1063/1.119654
Nakadaira, Atsushi, Tanaka, Hidenao (1998) Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(100) using metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 189. 411-414 doi:10.1016/s0022-0248(98)00326-1
Wu, J., Yaguchi, H., Onabe, K., Shiraki, Y. (1998) Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1−xN. Applied Physics Letters, 73 (2). 193-195 doi:10.1063/1.121752
Wu, Jun, Yaguchi, Hiroyuki, Onabe, Kentaro, Shiraki, Yasuhiro, Ito, Ryoichi (1998) Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates. Japanese Journal of Applied Physics, 37. 1440-1442 doi:10.1143/jjap.37.1440
Wu, Jun, Yaguchi, Hiroyuki, Onabe, Kentaro, Ito, Ryoichi, Shiraki, Yasuhiro (1998) Optical transitions in cubic GaN grown on GaAs(100) substrates by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 189. 415-419 doi:10.1016/s0022-0248(98)00311-x
Amano, H., Tanaka, T., Kunii, Y., Kato, K., Kim, S. T., Akasaki, I. (1994) Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure. Applied Physics Letters, 64 (11). 1377-1379 doi:10.1063/1.111942
Wu, J., Yaguchi, H., Zhang, B.P., Segawa, Y., Onabe, K., Shiraki, Y. (2000) Optical Properties of Cubic GaN Grown on 3C-SiC (100) Substrates by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 180 (1). 403-407 doi:10.1002/1521-396x(200007)180:1<403::aid-pssa403>3.0.co;2-a
Wu, J, Yaguchi, H, Nagasawa, H, Yamaguchi, Y, Onabe, K, Shiraki, Y, Ito, R (1998) Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates. Journal of Crystal Growth, 189. 420-424 doi:10.1016/s0022-0248(98)00312-1
Wu, Jun, Kudo, M., Nagayama, A., Yaguchi, H., Onabe, K., Shiraki, Y. (1999) Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 176 (1). 557-560 doi:10.1002/(sici)1521-396x(199911)176:1<557::aid-pssa557>3.0.co;2-2
 
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