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De Wolf, P., Geva, M., Hantschel, T., Vandervorst, W., Bylsma, R. B. (1998) Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy. Applied Physics Letters, 73 (15). 2155-2157 doi:10.1063/1.122408

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Reference TypeJournal (article/letter/editorial)
TitleTwo-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy
JournalApplied Physics Letters
AuthorsDe Wolf, P.Author
Geva, M.Author
Hantschel, T.Author
Vandervorst, W.Author
Bylsma, R. B.Author
Year1998 (October 12)Volume73
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.122408Search in ResearchGate
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Mindat Ref. ID8522018Long-form Identifiermindat:1:5:8522018:2
GUID0
Full ReferenceDe Wolf, P., Geva, M., Hantschel, T., Vandervorst, W., Bylsma, R. B. (1998) Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy. Applied Physics Letters, 73 (15). 2155-2157 doi:10.1063/1.122408
Plain TextDe Wolf, P., Geva, M., Hantschel, T., Vandervorst, W., Bylsma, R. B. (1998) Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy. Applied Physics Letters, 73 (15). 2155-2157 doi:10.1063/1.122408
In(1998, October) Applied Physics Letters Vol. 73 (15) AIP Publishing

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Xu, M. W., Hantschel, T., Vandervorst, W. (2002) Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy. Applied Physics Letters, 81 (1). 177-179 doi:10.1063/1.1490399
Xu, Ming Wei, Eyben, Pierre, Hantschel, Thomas, Vandervorst, Wilfried (2002) Reliable Two-Dimensional Carrier Profiling by Scanning Spreading Resistance Microscopy on InP-Based Devices with Fast Quantification Procedure. Japanese Journal of Applied Physics, 41. 1048-1054 doi:10.1143/jjap.41.1048
Hantschel, T., Niedermann, P., Trenkler, T., Vandervorst, W. (2000) Highly conductive diamond probes for scanning spreading resistance microscopy. Applied Physics Letters, 76 (12). 1603-1605 doi:10.1063/1.126109
Schulze, A., Hantschel, T., Eyben, P., Verhulst, A.S., Rooyackers, R., Vandooren, A., Vandervorst, W. (2013) Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy. Ultramicroscopy, 125. 18-23 doi:10.1016/j.ultramic.2012.10.008
Schulze, A., Cao, R., Eyben, P., Hantschel, T., Vandervorst, W. (2016) Outwitting the series resistance in scanning spreading resistance microscopy. Ultramicroscopy, 161. 59-65 doi:10.1016/j.ultramic.2015.10.029
Xu, Zheng, Hantschel, T., Tsigkourakos, M., Vandervorst, W. (2015) Scanning spreading resistance microscopy for electrical characterization of diamond interfacial layers. physica status solidi (a), 212 (11). 2578-2582 doi:10.1002/pssa.201532234
Álvarez, D., Hartwich, J., Fouchier, M., Eyben, P., Vandervorst, W. (2003) Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips. Applied Physics Letters, 82 (11). 1724-1726 doi:10.1063/1.1559931
Eyben, Pierre, Seidel, Felix, Hantschel, Thomas, Schulze, Andreas, Lorenz, Anne, De Castro, Angel Uruena, Van Gestel, Dries, John, Joachim, Horzel, Joerg, Vandervorst, Wilfried (2011) Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures. physica status solidi (a), 208 (3). 596-599 doi:10.1002/pssa.201000306
Stephenson, Robert, Verhulst, Anne, De Wolf, Peter, Caymax, Matty, Vandervorst, Wilfried (1998) Contrast reversal in scanning capacitance microscopy imaging. Applied Physics Letters, 73 (18). 2597-2599 doi:10.1063/1.122517
Dixon-Luinenburg, Oberon, Celano, Umberto, Vandervorst, Wilfried, Paredis, Kristof (2019) Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP. Ultramicroscopy, 206. 112809pp. doi:10.1016/j.ultramic.2019.06.009
De Wolf, P., Snauwaert, J., Clarysse, T., Vandervorst, W., Hellemans, L. (1995) Characterization of a point‐contact on silicon using force microscopy‐supported resistance measurements. Applied Physics Letters, 66 (12). 1530-1532 doi:10.1063/1.113636
 
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