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Okhonin, S., Fazan, P. (1998) Origin of the charge to breakdown distributions in thin silicon dioxide films. Applied Physics Letters, 73 (16). 2343-2344 doi:10.1063/1.121686

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Reference TypeJournal (article/letter/editorial)
TitleOrigin of the charge to breakdown distributions in thin silicon dioxide films
JournalApplied Physics Letters
AuthorsOkhonin, S.Author
Fazan, P.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121686Search in ResearchGate
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Mindat Ref. ID8522056Long-form Identifiermindat:1:5:8522056:2
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Full ReferenceOkhonin, S., Fazan, P. (1998) Origin of the charge to breakdown distributions in thin silicon dioxide films. Applied Physics Letters, 73 (16). 2343-2344 doi:10.1063/1.121686
Plain TextOkhonin, S., Fazan, P. (1998) Origin of the charge to breakdown distributions in thin silicon dioxide films. Applied Physics Letters, 73 (16). 2343-2344 doi:10.1063/1.121686
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Okhonin, S., Fazan, P., Guegan, G., Deleonibus, S., Martin, F. (1999) Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime. Applied Physics Letters, 74 (6). 842-843 doi:10.1063/1.123385
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Suñé, Jordi, Wu, Ernest Y. (2005) Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics. Applied Physics Letters, 86 (19). 193502pp. doi:10.1063/1.1925316
Samanta, Piyas, Sarkar, C. K. (2000) Correlation between the gate bias dependence of the probability of anode hole injection and breakdown in thin silicon dioxide films. Applied Physics Letters, 77 (26). 4350-4352 doi:10.1063/1.1332838
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