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Bidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., McPherson, S. A. (1998) Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Applied Physics Letters, 73 (16). 2242-2244 doi:10.1063/1.121689

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Reference TypeJournal (article/letter/editorial)
TitleLaser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth
JournalApplied Physics Letters
AuthorsBidnyk, S.Author
Little, B. D.Author
Cho, Y. H.Author
Krasinski, J.Author
Song, J. J.Author
Yang, W.Author
McPherson, S. A.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121689Search in ResearchGate
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Mindat Ref. ID8522059Long-form Identifiermindat:1:5:8522059:9
GUID0
Full ReferenceBidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., McPherson, S. A. (1998) Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Applied Physics Letters, 73 (16). 2242-2244 doi:10.1063/1.121689
Plain TextBidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., McPherson, S. A. (1998) Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Applied Physics Letters, 73 (16). 2242-2244 doi:10.1063/1.121689
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Yang, W., Perry, W. G., Bremser, M. D., Davis, R. F. (1999) Stimulated emission in GaN thin films in the temperature range of 300–700 K. Journal of Applied Physics, 85 (3). 1792-1795 doi:10.1063/1.369325
Bidnyk, S., Lam, J. B., Little, B. D., Kwon, Y. H., Song, J. J., Bulman, G. E., Kong, H. S., Schmidt, T. J. (1999) Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures. Applied Physics Letters, 75 (25). 3905-3907 doi:10.1063/1.125489
Bidnyk, S., Little, B. D., Song, J. J., Schmidt, T. J. (1999) A technique for evaluating optical confinement in GaN-based lasing structures. Applied Physics Letters, 75 (15). 2163-2165 doi:10.1063/1.124952
Bidnyk, S., Schmidt, T. J., Cho, Y. H., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1998) High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells. Applied Physics Letters, 72 (13). 1623-1625 doi:10.1063/1.121133
Lam, J. B., Bidnyk, S., Gainer, G. H., Little, B. D., Song, J. J., Yang, W. (2000) Study of gain mechanisms in AlGaN in the temperature range of 30–300 K. Applied Physics Letters, 77 (25). 4101-4103 doi:10.1063/1.1333692
Zang, K. Y., Wang, Y. D., Chua, S. J., Wang, L. S. (2005) Nanoscale lateral epitaxial overgrowth of GaN on Si (111). Applied Physics Letters, 87 (19). 193106pp. doi:10.1063/1.2126138
Yang, Wei, McPherson, Scott A, Mao, Zhigang, McKernan, Stuart, Carter, C.Barry (1999) Single-crystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowth. Journal of Crystal Growth, 204 (3). 270-274 doi:10.1016/s0022-0248(99)00205-5
Li, X., Bishop, S. G., Coleman, J. J. (1998) GaN epitaxial lateral overgrowth and optical characterization. Applied Physics Letters, 73 (9). 1179-1181 doi:10.1063/1.122121
Cho, Yong-Hoon, Kim, H. M., Kang, T. W., Song, J. J., Yang, W. (2002) Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties. Applied Physics Letters, 80 (7). 1141-1143 doi:10.1063/1.1450250
Bidnyk, S., Schmidt, T. J., Little, B. D., Song, J. J. (1999) Near-threshold gain mechanisms in GaN thin films in the temperature range of 20–700 K. Applied Physics Letters, 74 (1). 1-3 doi:10.1063/1.123114
Schmidt, T. J., Bidnyk, S., Cho, Yong-Hoon, Fischer, A. J., Song, J. J., Keller, S., Mishra, U. K., DenBaars, S. P. (1998) Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence. Applied Physics Letters, 73 (25). 3689-3691 doi:10.1063/1.122864
 
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