Reference Type | Journal (article/letter/editorial) |
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Title | Dielectric properties of epitaxial BaTiO3 thin films |
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Journal | Applied Physics Letters |
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Authors | Hoerman, B. H. | Author |
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Ford, G. M. | Author |
Kaufmann, L. D. | Author |
Wessels, B. W. | Author |
Year | 1998 (October 19) | Volume | 73 |
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Issue | 16 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.121691Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8522061 | Long-form Identifier | mindat:1:5:8522061:4 |
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GUID | 0 |
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Full Reference | Hoerman, B. H., Ford, G. M., Kaufmann, L. D., Wessels, B. W. (1998) Dielectric properties of epitaxial BaTiO3 thin films. Applied Physics Letters, 73 (16). 2248-2250 doi:10.1063/1.121691 |
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Plain Text | Hoerman, B. H., Ford, G. M., Kaufmann, L. D., Wessels, B. W. (1998) Dielectric properties of epitaxial BaTiO3 thin films. Applied Physics Letters, 73 (16). 2248-2250 doi:10.1063/1.121691 |
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In | (1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing |
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