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Prins, Johan F. (1998) Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation. Applied Physics Letters, 73 (16). 2308-2310 doi:10.1063/1.121806

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Reference TypeJournal (article/letter/editorial)
TitleUltraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation
JournalApplied Physics Letters
AuthorsPrins, Johan F.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121806Search in ResearchGate
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Mindat Ref. ID8522081Long-form Identifiermindat:1:5:8522081:8
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Full ReferencePrins, Johan F. (1998) Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation. Applied Physics Letters, 73 (16). 2308-2310 doi:10.1063/1.121806
Plain TextPrins, Johan F. (1998) Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation. Applied Physics Letters, 73 (16). 2308-2310 doi:10.1063/1.121806
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Prins, Johan F. (2000) Electrical conduction in diamond after vacancy generation by means of carbon-ion implantation. Applied Physics Letters, 76 (15). 2095-2097 doi:10.1063/1.126266
Prins, Johan F. (2000) n-type semiconducting diamond by means of oxygen-ion implantation. Physical Review B, 61 (11) 7191-7194 doi:10.1103/physrevb.61.7191
Dresselhaus, M. S., Kalish, R., Prins, Johan F. (1993) Ion Implantation in Diamond, Graphite and Related Materials. Physics Today, 46. 65 doi:10.1063/1.2808905
Braunstein, G., Kalish, R. (1983) Effectivep‐type doping of diamond by boron ion implantation. Journal of Applied Physics, 54 (4). 2106-2108 doi:10.1063/1.332262
Kalish, R., Uzan‐Saguy, C., Samoiloff, A., Locher, R., Koidl, P. (1994) Doping of polycrystalline diamond by boron ion implantation. Applied Physics Letters, 64 (19). 2532-2534 doi:10.1063/1.111564
Seki, Yuhei; Yoshihara, Minami; Hoshino, Yasushi (2025) The origin of degradation in electrical properties by ion implantation doping of boron in diamond. Journal of Applied Physics, 137 (18). doi:10.1063/5.0272310
Ruan, J., Kobashi, K., Choyke, W. J. (1992) Effect of oxygen on boron doping in chemical vapor deposition of diamond as deduced from cathodoluminescence studies. Applied Physics Letters, 60 (15). 1884-1886 doi:10.1063/1.107143
Prins, J. F. (1982) Bipolar transistor action in ion implanted diamond. Applied Physics Letters, 41 (10). 950-952 doi:10.1063/1.93346
Prins, Johan F (2001) Ballistic self-annealing during ion implantation. Journal of Physics D: Applied Physics, 34. 3003-3010 doi:10.1088/0022-3727/34/20/301
Tshepe, Tshakane, Prins, Johan F., Hoch, Michael J. R. (1996) Transport studies in boron-ion implanted type IIa diamond. Czechoslovak Journal of Physics, 46. 2439-2440 doi:10.1007/bf02570206
Cabioc’h, T., Jaouen, M., Denanot, M. F., Bechet, P. (1998) Influence of the implantation parameters on the microstructure of carbon onions produced by carbon ion implantation. Applied Physics Letters, 73 (21). 3096-3098 doi:10.1063/1.122684
 
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