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Voß, S., Bracht, H., Stolwijk, N. A., Kringho/j, P., Nylandsted Larsen, A. (1998) Energy levels of Zn in Si1−XGeX alloys. Applied Physics Letters, 73 (16). 2331-2333 doi:10.1063/1.121813

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Reference TypeJournal (article/letter/editorial)
TitleEnergy levels of Zn in Si1−XGeX alloys
JournalApplied Physics Letters
AuthorsVoß, S.Author
Bracht, H.Author
Stolwijk, N. A.Author
Kringho/j, P.Author
Nylandsted Larsen, A.Author
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121813Search in ResearchGate
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Mindat Ref. ID8522088Long-form Identifiermindat:1:5:8522088:1
GUID0
Full ReferenceVoß, S., Bracht, H., Stolwijk, N. A., Kringho/j, P., Nylandsted Larsen, A. (1998) Energy levels of Zn in Si1−XGeX alloys. Applied Physics Letters, 73 (16). 2331-2333 doi:10.1063/1.121813
Plain TextVoß, S., Bracht, H., Stolwijk, N. A., Kringho/j, P., Nylandsted Larsen, A. (1998) Energy levels of Zn in Si1−XGeX alloys. Applied Physics Letters, 73 (16). 2331-2333 doi:10.1063/1.121813
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Voss, S., Bracht, H., Stolwijk, N.A., Kringh�j, P., Nylandsted Larsen, A. (1998) Energy Levels of Zn in Si1?xGex Alloys: The Change-Over from Highly Localized Deep States to Shallow-Level Centers. physica status solidi (b), 210 (2). 771-775 doi:10.1002/(sici)1521-3951(199812)210:2<771::aid-pssb771>3.0.co;2-h
Nikolajsen, F., Kringho/j, P., Larsen, A. Nylandsted (1996) Substitutional gold in Si1−xGex. Applied Physics Letters, 69 (12). 1743-1745 doi:10.1063/1.117471
Larsen, Arne Nylandsted, Kringho/j, Per (1996) Diffusion of Sb in relaxed Si1−xGex. Applied Physics Letters, 68 (19). 2684-2686 doi:10.1063/1.116281
Monakhov, E. V., Nylandsted Larsen, A., Kringho/j, P. (1997) Electronic defect levels in relaxed, epitaxialp-type Si1−xGex layers produced by MeV proton irradiation. Journal of Applied Physics, 81 (3). 1180-1183 doi:10.1063/1.365554
Kube, R., Bracht, H., Hansen, J. Lundsgaard, Larsen, A. Nylandsted, Haller, E. E., Paul, S., Lerch, W. (2010) Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys. Journal of Applied Physics, 107 (7). 73520pp. doi:10.1063/1.3380853
Shiryaev, S. Yu., Lundsgaard Hansen, J., Kringho/j, P., Nylandsted Larsen, A. (1995) Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si. Applied Physics Letters, 67 (16). 2287-2289 doi:10.1063/1.115128
Leervad Pedersen, T. P., Larsen, A. Nylandsted, Mesli, A. (1999) Carbon-related defects in proton-irradiated, n-type epitaxial Si1−xGex. Applied Physics Letters, 75 (26). 4085-4087 doi:10.1063/1.125544
Gaiduk, P. I., Tishkov, V. S., Shiryaev, S. Yu., Larsen, A. Nylandsted (1998) Effect of composition and annealing on structural defects in high-dose arsenic-implanted Si1−xGex alloys. Journal of Applied Physics, 84 (8). 4185-4192 doi:10.1063/1.368634
Voss, S., Stolwijk, N. A., Bracht, H., Nylandsted Larsen, A., Overhof, Harald (2003) Substitutional Zn in SiGe: Deep-level transient spectroscopy and electron density calculations. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035208
Alkhaldi, H. S., Kremer, F., Bierschenk, T., Hansen, J. L., Nylandsted-Larsen, A., Williams, J. S., Ridgway, M. C. (2016) Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys. Journal of Applied Physics, 119 (9). 94303pp. doi:10.1063/1.4942995
Fyhn, M. F., Shiryaev, S. Yu., Lundsgaard Hansen, J., Nylandsted Larsen, A. (1996) Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates. Applied Physics Letters, 69 (3). 394-396 doi:10.1063/1.118072
 
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