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Plimmer, S. A., Tan, C. H., David, J. P. R., Grey, R., Li, K. F., Rees, G. J. (1999) The effect of an electric-field gradient on avalanche noise. Applied Physics Letters, 75 (19). 2963-2965 doi:10.1063/1.125202

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of an electric-field gradient on avalanche noise
JournalApplied Physics Letters
AuthorsPlimmer, S. A.Author
Tan, C. H.Author
David, J. P. R.Author
Grey, R.Author
Li, K. F.Author
Rees, G. J.Author
Year1999 (November 8)Volume75
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.125202Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8524891Long-form Identifiermindat:1:5:8524891:1
GUID0
Full ReferencePlimmer, S. A., Tan, C. H., David, J. P. R., Grey, R., Li, K. F., Rees, G. J. (1999) The effect of an electric-field gradient on avalanche noise. Applied Physics Letters, 75 (19). 2963-2965 doi:10.1063/1.125202
Plain TextPlimmer, S. A., Tan, C. H., David, J. P. R., Grey, R., Li, K. F., Rees, G. J. (1999) The effect of an electric-field gradient on avalanche noise. Applied Physics Letters, 75 (19). 2963-2965 doi:10.1063/1.125202
In(1999, November) Applied Physics Letters Vol. 75 (19) AIP Publishing

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Tan, C. H., Clark, J. C., David, J. P. R., Rees, G. J., Plimmer, S. A., Tozer, R. C., Herbert, D. C., Robbins, D. J., Leong, W. Y., Newey, J. (2000) Avalanche noise measurement in thin Si p+-i-n+ diodes. Applied Physics Letters, 76 (26). 3926-3928 doi:10.1063/1.126823
Chia, C. K., David, J. P. R., Plimmer, S. A., Rees, G. J., Grey, R., Robson, P. N. (2000) Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures. Journal of Applied Physics, 88 (5). 2601-2608 doi:10.1063/1.1286329
Chia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes. Journal of Applied Physics, 87 (11). 7885-7891 doi:10.1063/1.373472
Chia, C. K., David, J. P. R., Rees, G. J., Plimmer, S. A., Grey, R., Robson, P. N. (1998) Impact ionization in AlxGa1−xAs/GaAs single heterostructures. Journal of Applied Physics, 84 (8). 4363-4369 doi:10.1063/1.368656
Hambleton, P. J., Plimmer, S. A., David, J. P. R., Rees, G. J., Dunn, G. M. (2002) Simulated current response in avalanche photodiodes. Journal of Applied Physics, 91 (4). 2107-2111 doi:10.1063/1.1432122
Khoo, E. A., David, J. P. R., Woodhead, J., Grey, R., Rees, G. J. (1999) Photoluminescence linewidths of piezoelectric quantum wells. Applied Physics Letters, 75 (13). 1929-1931 doi:10.1063/1.124874
Ng, B. K., David, J. P. R., Plimmer, S. A., Hopkinson, M., Tozer, R. C., Rees, G. J. (2000) Impact ionization coefficients of Al0.8Ga0.2As. Applied Physics Letters, 77 (26). 4374-4376 doi:10.1063/1.1336556
Ong, D. S., Li, K. F., Rees, G. J., David, J. P. R., Robson, P. N., Dunn, G. M. (1998) Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes. Applied Physics Letters, 72 (2). 232-234 doi:10.1063/1.120695
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