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Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., Davis, R. F. (1999) Erratum: “Evidence for localized Si-donor state and its DX-like properties in AlGaN” [Appl. Phys. Lett. 74, 3833 (1999)]. Applied Physics Letters, 75 (20). 3225 doi:10.1063/1.125286

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Evidence for localized Si-donor state and its DX-like properties in AlGaN” [Appl. Phys. Lett. 74, 3833 (1999)]
JournalApplied Physics Letters
AuthorsSkierbiszewski, C.Author
Suski, T.Author
Leszczynski, M.Author
Shin, M.Author
Skowronski, M.Author
Bremser, M. D.Author
Davis, R. F.Author
Year1999 (November 15)Volume75
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.125286Search in ResearchGate
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Mindat Ref. ID8525031Long-form Identifiermindat:1:5:8525031:4
GUID0
Full ReferenceSkierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., Davis, R. F. (1999) Erratum: “Evidence for localized Si-donor state and its DX-like properties in AlGaN” [Appl. Phys. Lett. 74, 3833 (1999)]. Applied Physics Letters, 75 (20). 3225 doi:10.1063/1.125286
Plain TextSkierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., Davis, R. F. (1999) Erratum: “Evidence for localized Si-donor state and its DX-like properties in AlGaN” [Appl. Phys. Lett. 74, 3833 (1999)]. Applied Physics Letters, 75 (20). 3225 doi:10.1063/1.125286
In(1999, November) Applied Physics Letters Vol. 75 (20) AIP Publishing

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Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., Davis, R. F. (1999) Evidence for localized Si-donor state and its metastable properties in AlGaN. Applied Physics Letters, 74 (25). 3833-3835 doi:10.1063/1.124195
Kitaoka, Kenji, Si, Jinhai, Mitsuyu, Tsuneo, Hirao, Kazuyuki (1999) Erratum: “Optical poling of azo-dye-doped thin films using an ultrashort pulse laser” [Appl. Phys. Lett. 75, 157 (1999)]. Applied Physics Letters, 75 (20). 3225 doi:10.1063/1.125287
Ng, H. M., Doppalapudi, D., Iliopoulos, E., Moustakas, T. D. (1999) Erratum: “Distributed Bragg reflectors based on AlN/GaN multilayers” [Appl. Phys. Lett. 74, 1036 (1999)]. Applied Physics Letters, 74 (26). 4070 doi:10.1063/1.123264
Boscherini, F., Lantier, R., Rizzi, A., D’Acapito, F., Mobilio, S. (1999) Erratum: “Evidence for relaxed and high-quality growth of GaN on SiC(0001)” [Appl. Phys. Lett. 74, 3308 (1999)]. Applied Physics Letters, 75 (2). 304 doi:10.1063/1.124355
Katulka, G., Guedj, C., Kolodzey, J., Wilson, Consultant, R. G., Swann, C., Tsao, M. W., Rabolt, J. (1999) Erratum: “Electrical and optical properties of Ge–implanted 4H–SiC” [Appl. Phys. Lett. 74, 540 (1999)]. Applied Physics Letters, 74 (18). 2723 doi:10.1063/1.123949
Tang, J. M., Shore, K. A. (1999) Erratum: “Four-wave mixing of strong picosecond optical pulses in passive semiconductor waveguides” [Appl. Phys. Lett. 74, 2105 (1999)]. Applied Physics Letters, 75 (23). 3720 doi:10.1063/1.125393
Gladysiewicz, M., Janicki, L., Siekacz, M., Cywinski, G., Skierbiszewski, C., Kudrawiec, R. (2018) Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]. Applied Physics Letters, 113 (9). 99901pp. doi:10.1063/1.5049486
Carlson, C. M., Parilla, P. A., Siegal, M. P., Ginley, D. S., Wang, Y.-T., Blaugher, R. D., Price, J. C., Overmyer, D. L., Venturini, E. L. (1999) Erratum: “LaNiO3 buffer layers for high critical current density YBa2Cu3O7−δ and Tl2Ba2CaCu2O8−δ films” [Appl. Phys. Lett. 75, 2479 (1999)]. Applied Physics Letters, 75 (24). 3886 doi:10.1063/1.124249
Perera, A. G. U., Shen, W. Z., Ershov, M., Liu, H. C., Buchanan, M., Schaff, W. J. (1999) Erratum: “Negative capacitance of GaAs homojunction far-infrared detectors” [Appl. Phys. Lett. 74, 3167 (1999)]. Applied Physics Letters, 75 (2). 304 doi:10.1063/1.124356
Hall, K. C., Leonard, S. W., van Driel, H. M., Kost, A. R., Selvig, E., Chow, D. H. (1999) Erratum: “Subpicosecond spin relaxation in GaAsSb multiple quantum wells” [Appl. Phys. Lett. 75, 3665 (1999)]. Applied Physics Letters, 75 (26). 4210 doi:10.1063/1.125585
Hayakawa, Toshiro (1999) Erratum: “Facet temperature distribution in broad stripe high power laser diodes” [Appl. Phys. Lett. 75, 1467 (1999)]. Applied Physics Letters, 75 (20). 3226 doi:10.1063/1.125278
 
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