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Kleinschmit, M. W., Yeadon, M., Gibson, J. M. (1999) Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy. Applied Physics Letters, 75 (21). 3288-3290 doi:10.1063/1.125327

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Reference TypeJournal (article/letter/editorial)
TitleNucleation of single-crystal CoSi2 with oxide-mediated epitaxy
JournalApplied Physics Letters
AuthorsKleinschmit, M. W.Author
Yeadon, M.Author
Gibson, J. M.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125327Search in ResearchGate
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Mindat Ref. ID8525059Long-form Identifiermindat:1:5:8525059:0
GUID0
Full ReferenceKleinschmit, M. W., Yeadon, M., Gibson, J. M. (1999) Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy. Applied Physics Letters, 75 (21). 3288-3290 doi:10.1063/1.125327
Plain TextKleinschmit, M. W., Yeadon, M., Gibson, J. M. (1999) Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy. Applied Physics Letters, 75 (21). 3288-3290 doi:10.1063/1.125327
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Chong, R. K. K., Yeadon, M., Choi, W. K., Stach, E. A., Boothroyd, C. B. (2003) Nitride-mediated epitaxy of CoSi2 on Si(001). Applied Physics Letters, 82 (12). 1833-1835 doi:10.1063/1.1555708
Yeadon, M., Ghaly, M., Yang, J. C., Averback, R. S., Gibson, J. M. (1998) “Contact epitaxy” observed in supported nanoparticles. Applied Physics Letters, 73 (22). 3208-3210 doi:10.1063/1.122720
Tung, R. T. (1996) Oxide mediated epitaxy of CoSi2 on silicon. Applied Physics Letters, 68 (24). 3461-3463 doi:10.1063/1.115793
Yang, J. C., Kolasa, B., Gibson, J. M., Yeadon, M. (1998) Self-limiting oxidation of copper. Applied Physics Letters, 73 (19). 2841-2843 doi:10.1063/1.122608
Dong, J. W., Chen, L. C., Palmstro/m, C. J., James, R. D., McKernan, S. (1999) Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters, 75 (10). 1443-1445 doi:10.1063/1.125009
Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P. (1997) Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy. Applied Physics Letters, 70 (4). 467-469 doi:10.1063/1.118183
Beaudoin, M., Adamcyk, M., Gelbart, Z., Giesen, U., Kelson, I., Levy, Y., MacKenzie, J. A., Tiedje, T. (1998) Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss. Applied Physics Letters, 72 (25). 3288-3290 doi:10.1063/1.121626
Yeadon, M., Hamdani, F., Xu, G. Y., Salvador, A., Botchkarev, A. E., Gibson, J. M., Morkoç, H. (1997) Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy. Applied Physics Letters, 70 (22). 3023-3025 doi:10.1063/1.118737
Yang, J. C., Yeadon, M., Kolasa, B., Gibson, J. M. (1997) Oxygen surface diffusion in three-dimensional Cu2O growth on Cu(001) thin films. Applied Physics Letters, 70 (26). 3522-3524 doi:10.1063/1.119220
Hamdani, F., Yeadon, M., Smith, David J., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Gibson, J. M., Polyakov, A. Y., Skowronski, M., Morkoç, H. (1998) Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy. Journal of Applied Physics, 83 (2). 983-990 doi:10.1063/1.366786
Yalisove, S. M., Eaglesham, D. J., Tung, R. T. (1989) Single‐crystal growth of CoSi2 (110) on Si (110). Applied Physics Letters, 55 (20). 2075-2077 doi:10.1063/1.102110
 
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