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Aumer, M. E., LeBoeuf, S. F., McIntosh, F. G., Bedair, S. M. (1999) High optical quality AlInGaN by metalorganic chemical vapor deposition. Applied Physics Letters, 75 (21). 3315-3317 doi:10.1063/1.125336

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Reference TypeJournal (article/letter/editorial)
TitleHigh optical quality AlInGaN by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsAumer, M. E.Author
LeBoeuf, S. F.Author
McIntosh, F. G.Author
Bedair, S. M.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125336Search in ResearchGate
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Mindat Ref. ID8525068Long-form Identifiermindat:1:5:8525068:8
GUID0
Full ReferenceAumer, M. E., LeBoeuf, S. F., McIntosh, F. G., Bedair, S. M. (1999) High optical quality AlInGaN by metalorganic chemical vapor deposition. Applied Physics Letters, 75 (21). 3315-3317 doi:10.1063/1.125336
Plain TextAumer, M. E., LeBoeuf, S. F., McIntosh, F. G., Bedair, S. M. (1999) High optical quality AlInGaN by metalorganic chemical vapor deposition. Applied Physics Letters, 75 (21). 3315-3317 doi:10.1063/1.125336
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., Bedair, S. M. (2001) Self-assembled AlInGaN quaternary superlattice structures. Applied Physics Letters, 79 (11). 1616-1618 doi:10.1063/1.1400763
Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., Bedair, S. M. (2002) Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08). Applied Physics Letters, 80 (14). 2475-2477 doi:10.1063/1.1464225
Aumer, M. E., LeBoeuf, S. F., Moody, B. F., Bedair, S. M. (2001) Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells. Applied Physics Letters, 79 (23). 3803-3805 doi:10.1063/1.1418453
Aumer, M. E., LeBoeuf, S. F., Bedair, S. M., Smith, M., Lin, J. Y., Jiang, H. X. (2000) Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures. Applied Physics Letters, 77 (6). 821-823 doi:10.1063/1.1306648
Aumer, M. E., LeBoeuf, S. F., Moody, B. F., Bedair, S. M., Nam, K., Lin, J. Y., Jiang, H. X. (2002) Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures. Applied Physics Letters, 80 (17). 3099-3101 doi:10.1063/1.1469219
LeBoeuf, S. F., Aumer, M. E., Bedair, S. M. (2000) Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells. Applied Physics Letters, 77 (1). 97-99 doi:10.1063/1.126889
Boutros, K. S., Roberts, J. C., Bedair, S. M., Carruthers, T. F., Frankel, M. Y. (1995) High speed metal‐semiconductor‐metal photodetector manufactured on GaAs by low‐temperature photoassisted metalorganic chemical vapor deposition. Applied Physics Letters, 66 (26). 3651-3653 doi:10.1063/1.114129
McIntosh, F. G., Boutros, K. S., Roberts, J. C., Bedair, S. M., Piner, E. L., El‐Masry, N. A. (1996) Growth and characterization of AlInGaN quaternary alloys. Applied Physics Letters, 68 (1). 40-42 doi:10.1063/1.116749
Bedair, S. M., Tischler, M. A., Katsuyama, T. (1986) New laterally selective growth technique by metalorganic chemical vapor deposition. Applied Physics Letters, 48 (1). 30-32 doi:10.1063/1.96751
Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., Piner, E. L., El‐Masry, N. A. (1995) High quality InGaN films by atomic layer epitaxy. Applied Physics Letters, 67 (13). 1856-1858 doi:10.1063/1.114355
Shan, W., Little, B. D., Song, J. J., Feng, Z. C., Schurman, M., Stall, R. A. (1996) Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition. Applied Physics Letters, 69 (22). 3315-3317 doi:10.1063/1.117291
 
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