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Dogheche, E., Belgacem, B., Remiens, D., Ruterana, P., Omnes, F. (1999) Interface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding information. Applied Physics Letters, 75 (21). 3324-3326 doi:10.1063/1.125339

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Reference TypeJournal (article/letter/editorial)
TitleInterface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding information
JournalApplied Physics Letters
AuthorsDogheche, E.Author
Belgacem, B.Author
Remiens, D.Author
Ruterana, P.Author
Omnes, F.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125339Search in ResearchGate
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Mindat Ref. ID8525071Long-form Identifiermindat:1:5:8525071:2
GUID0
Full ReferenceDogheche, E., Belgacem, B., Remiens, D., Ruterana, P., Omnes, F. (1999) Interface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding information. Applied Physics Letters, 75 (21). 3324-3326 doi:10.1063/1.125339
Plain TextDogheche, E., Belgacem, B., Remiens, D., Ruterana, P., Omnes, F. (1999) Interface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding information. Applied Physics Letters, 75 (21). 3324-3326 doi:10.1063/1.125339
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Dogheche, E., Ruterana, P., Omnes, F. (2001) Influence of low-temperature buffer layers on the optical waveguiding properties of AlxGa1−xN alloys. Journal of Applied Physics, 90 (9). 4411-4414 doi:10.1063/1.1389332
Dogheche, E., Remiens, D., Omnes, F. (1999) Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1−xN thin-film waveguides by prism coupling technique. Applied Physics Letters, 74 (26). 3960-3962 doi:10.1063/1.124236
Dogheche, E., Belgacem, B., Remiens, D., Ruterana, P., Fmnes, F. (1999) Prism Coupling Technique for Optical Characterization of LP-MOVPE AlxGa1–xN Thin Film Waveguides. physica status solidi (a), 176 (1). 347-350 doi:10.1002/(sici)1521-396x(199911)176:1<347::aid-pssa347>3.0.co;2-e
Lansiaux, X., Dogheche, E., Remiens, D., Guilloux-viry, M., Perrin, A., Ruterana, P. (2001) LiNbO3 thick films grown on sapphire by using a multistep sputtering process. Journal of Applied Physics, 90 (10). 5274-5277 doi:10.1063/1.1378332
Alvarez, A. L., Calle, F., Monroy, E., Pau, J. L., Sanchez-Garcia, M. A., Calleja, E., Muñoz, E., Omnes, F., Gibart, P., Hageman, P. R. (2002) Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy. Journal of Applied Physics, 92 (1). 223-226 doi:10.1063/1.1478788
Dogheche, E., Ruterana, P., Nouet, G., Omnes, F., Gibart, P. (2001) Investigation of Refractive Index and Optical Propagation Loss in Gallium Nitride Based Waveguides. physica status solidi (b), 228 (2). 429-432 doi:10.1002/1521-3951(200111)228:2<429::aid-pssb429>3.0.co;2-a
Dogheche, E., Remiens, D., Shikata, S., Hachigo, A., Nakahata, H. (2005) High-frequency surface acoustic wave devices based on LiNbO3∕diamond multilayered structure. Applied Physics Letters, 87 (21). 213503pp. doi:10.1063/1.2135383
Lafford, T. A., Parbrook, P. J., Tanner, B. K. (2003) Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1−xN/AlN/GaN heterostructures. Applied Physics Letters, 83 (26). 5434-5436 doi:10.1063/1.1637717
Shen, B., Someya, T., Arakawa, Y. (2000) Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures. Applied Physics Letters, 76 (19). 2746-2748 doi:10.1063/1.126463
Song, J., Xu, F. J., Miao, Z. L., Wang, Y., Wang, X. Q., Shen, B. (2009) Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of AlxGa1−xN/GaN heterostructures. Journal of Applied Physics, 106 (8). 83711pp. doi:10.1063/1.3246866
Rousseau, A., Guilloux-Viry, M., Dogheche, E., Bensalah, M., Remiens, D. (2007) Growth and optical properties of KTa1−xNbxO3 thin films grown by pulsed laser deposition on MgO substrates. Journal of Applied Physics, 102 (9). 93106pp. doi:10.1063/1.2809400
 
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