| Reference Type | Journal (article/letter/editorial) |
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| Title | Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements |
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| Journal | Applied Physics Letters |
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| Authors | Kleider, J. P. | Author |
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| Longeaud, C. | Author |
| Gauthier, M. | Author |
| Meaudre, M. | Author |
| Meaudre, R. | Author |
| Butté, R. | Author |
| Vignoli, S. | Author |
| Roca i Cabarrocas, P. | Author |
| Year | 1999 (November 22) | Volume | 75 |
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| Issue | 21 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.125348Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8525080 | Long-form Identifier | mindat:1:5:8525080:0 |
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|
| GUID | 0 |
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| Full Reference | Kleider, J. P., Longeaud, C., Gauthier, M., Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Roca i Cabarrocas, P. (1999) Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements. Applied Physics Letters, 75 (21). 3351-3353 doi:10.1063/1.125348 |
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| Plain Text | Kleider, J. P., Longeaud, C., Gauthier, M., Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Roca i Cabarrocas, P. (1999) Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements. Applied Physics Letters, 75 (21). 3351-3353 doi:10.1063/1.125348 |
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| In | (1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing |
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