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Amy, F., Soukiassian, P., Hwu, Y.-K., Brylinski, C. (1999) SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation. Applied Physics Letters, 75 (21). 3360-3362 doi:10.1063/1.125351

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Reference TypeJournal (article/letter/editorial)
TitleSiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation
JournalApplied Physics Letters
AuthorsAmy, F.Author
Soukiassian, P.Author
Hwu, Y.-K.Author
Brylinski, C.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125351Search in ResearchGate
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Mindat Ref. ID8525083Long-form Identifiermindat:1:5:8525083:7
GUID0
Full ReferenceAmy, F., Soukiassian, P., Hwu, Y.-K., Brylinski, C. (1999) SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation. Applied Physics Letters, 75 (21). 3360-3362 doi:10.1063/1.125351
Plain TextAmy, F., Soukiassian, P., Hwu, Y.-K., Brylinski, C. (1999) SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation. Applied Physics Letters, 75 (21). 3360-3362 doi:10.1063/1.125351
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Amy, F., Enriquez, H., Soukiassian, P., Brylinski, C., Mayne, A., Dujardin, G. (2001) Si/6H–SiC(0001): An unexpected cubic 4×3 Si phase overlayer. Applied Physics Letters, 79 (6). 767-769 doi:10.1063/1.1389510
Amy, F., Hwu, Y., Brylinski, Christian, Soukiassian, P. (2000) Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface. Materials Science Forum, 338. 395-398 doi:10.4028/www.scientific.net/msf.338-342.395
Amy, F., Soukiassian, P., Hwu, Y. K., Brylinski, C. (2002) Si-rich6H- and4H−SiC(0001)3×3 surface oxidation and initialSiO2/SiCinterface formation from 25 to 650 °C. Physical Review B, 65 (16) doi:10.1103/physrevb.65.165323
Amy, F., Hwu, Y., Brylinski, Christian, Soukiassian, P. (2001) Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3. Materials Science Forum, 353. 215-218 doi:10.4028/www.scientific.net/msf.353-356.215
Amy, F., Soukiassian, P., Brylinski, C. (2004) Atomic cracks and (23×2×3)-R30° reconstruction at 6H-SiC(0001) surface. Applied Physics Letters, 85 (6). 926-928 doi:10.1063/1.1774251
Amy, F., Soukiassian, P., Hwu, Y.K., Brylinski, C. (2000) Indentification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components. Surface Science, 464 (1). doi:10.1016/s0039-6028(00)00637-3
Amy, F., Enriquez, H., Soukiassian, P., Storino, P.-F., Chabal, Y. J., Mayne, A. J., Dujardin, G., Hwu, Y. K., Brylinski, C. (2001) Atomic Scale Oxidation of a Complex System:O2/α-SiC(0001)-(3×3). Physical Review Letters, 86 (19). 4342-4345 doi:10.1103/physrevlett.86.4342
Semond, F., Douillard, L., Soukiassian, P., Dunham, D., Amy, F., Rivillon, S. (1996) Direct SiO2/β‐SiC(100)3×2 interface formation from 25 °C to 500 °C. Applied Physics Letters, 68 (15). 2144-2146 doi:10.1063/1.115612
Radtke, C., Enriquez, H., Arnault, J. C., Soukiassian, P., Moras, P., Crotti, C., Perfetti, P. (2005) Initial nitride formation at Si∕3C–SiC(100)3×2 interface by oxynitridation. Applied Physics Letters, 87 (19). 193110pp. doi:10.1063/1.2130714
Xu, J. P., Lai, P. T., Chan, C. L., Cheng, Y. C. (2000) Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment. Applied Physics Letters, 76 (3). 372-374 doi:10.1063/1.126120
Derycke, V., Fonteneau, P., Hwu, Y. K., Soukiassian, P. (2006) From K atom pairs to K atomic chains: A semiconducting 2×3 to metallic 2×1 transition on the β-SiC(100) c(4×2) surface. Applied Physics Letters, 88 (2). 22105pp. doi:10.1063/1.2162679
 
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