Reference Type | Journal (article/letter/editorial) |
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Title | Room temperature La0.7Sr0.3MnO3 magnetoresistive prototype memory element |
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Journal | Applied Physics Letters |
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Authors | Cadieu, F. J. | Author |
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Chen, Li | Author |
Li, Biao | Author |
Theodoropoulos, T. | Author |
Year | 1999 (November 22) | Volume | 75 |
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Issue | 21 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.125354Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8525086 | Long-form Identifier | mindat:1:5:8525086:4 |
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GUID | 0 |
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Full Reference | Cadieu, F. J., Chen, Li, Li, Biao, Theodoropoulos, T. (1999) Room temperature La0.7Sr0.3MnO3 magnetoresistive prototype memory element. Applied Physics Letters, 75 (21). 3369-3371 doi:10.1063/1.125354 |
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Plain Text | Cadieu, F. J., Chen, Li, Li, Biao, Theodoropoulos, T. (1999) Room temperature La0.7Sr0.3MnO3 magnetoresistive prototype memory element. Applied Physics Letters, 75 (21). 3369-3371 doi:10.1063/1.125354 |
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In | (1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing |
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