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Namkoong, Gon, Doolittle, W. Alan, Brown, April S. (2000) Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (26). 4386-4388 doi:10.1063/1.1334942

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Reference TypeJournal (article/letter/editorial)
TitleIncorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
JournalApplied Physics Letters
AuthorsNamkoong, GonAuthor
Doolittle, W. AlanAuthor
Brown, April S.Author
Year2000 (December 25)Volume77
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.1334942Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8528032Long-form Identifiermindat:1:5:8528032:4
GUID0
Full ReferenceNamkoong, Gon, Doolittle, W. Alan, Brown, April S. (2000) Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (26). 4386-4388 doi:10.1063/1.1334942
Plain TextNamkoong, Gon, Doolittle, W. Alan, Brown, April S. (2000) Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (26). 4386-4388 doi:10.1063/1.1334942
In(2000, December) Applied Physics Letters Vol. 77 (26) AIP Publishing

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Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni, Namkoong, Gon, Doolittle, W. Alan, Brown, April S. (2002) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers. Journal of Applied Physics, 91 (4). 2508-2518 doi:10.1063/1.1435835
Namkoong, Gon, Doolittle, W. Alan, Brown, April S., Losurdo, Maria, Capezzuto, Pio, Bruno, Giovanni (2002) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics. Journal of Applied Physics, 91 (4). 2499-2507 doi:10.1063/1.1435834
Burnham, Shawn D., Namkoong, Gon, Look, David C., Clafin, Bruce, Doolittle, W. Alan (2008) Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy. Journal of Applied Physics, 104 (2). 24902pp. doi:10.1063/1.2953089
Namkoong, Gon, Lee, Kyoung-Keun, Madison, Shannon M., Henderson, Walter, Ralph, Stephen E., Doolittle, W. Alan (2005) III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy. Applied Physics Letters, 87 (17). 171107pp. doi:10.1063/1.2084340
Losurdo, Maria, Giangregorio, Maria M., Capezzuto, Pio, Bruno, Giovanni, Namkoong, Gon, Doolittle, W. Alan, Brown, April S. (2004) Interplay between GaN polarity and surface reactivity towards atomic hydrogen. Journal of Applied Physics, 95 (12). 8408-8418 doi:10.1063/1.1745124
Burnham, Shawn D., Namkoong, Gon, Henderson, Walter, Doolittle, W. Alan (2005) Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control. Journal of Crystal Growth, 279 (1). 26-30 doi:10.1016/j.jcrysgro.2005.02.001
Namkoong, Gon, Trybus, Elaissa, Lee, Kyung Keun, Moseley, Michael, Doolittle, W. Alan, Look, David C. (2008) Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN. Applied Physics Letters, 93 (17). 172112pp. doi:10.1063/1.3005640
Zhang, Meng, Bhattacharya, Pallab, Guo, Wei, Banerjee, Animesh (2010) Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. Applied Physics Letters, 96 (13). 132103pp. doi:10.1063/1.3374882
Pan, Z., Li, L. H., Zhang, W., Lin, Y. W., Wu, R. H. (2000) Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 77 (2). 214-216 doi:10.1063/1.126928
Ko, H. J., Chen, Y. F., Hong, S. K., Wenisch, H., Yao, T., Look, D. C. (2000) Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 77 (23). 3761-3763 doi:10.1063/1.1331089
Heying, B., Smorchkova, I., Poblenz, C., Elsass, C., Fini, P., Den Baars, S., Mishra, U., Speck, J. S. (2000) Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 77 (18). 2885-2887 doi:10.1063/1.1322370
 
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