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Broschwitz, M., Dettmer, K., Schoenes, J. (2000) Independent determination of Ge content in thin Si1−xGex quantum wells by spectroscopic ellipsometry. Applied Physics Letters, 77 (3). 367-369 doi:10.1063/1.126978

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Reference TypeJournal (article/letter/editorial)
TitleIndependent determination of Ge content in thin Si1−xGex quantum wells by spectroscopic ellipsometry
JournalApplied Physics Letters
AuthorsBroschwitz, M.Author
Dettmer, K.Author
Schoenes, J.Author
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126978Search in ResearchGate
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Mindat Ref. ID8528067Long-form Identifiermindat:1:5:8528067:0
GUID0
Full ReferenceBroschwitz, M., Dettmer, K., Schoenes, J. (2000) Independent determination of Ge content in thin Si1−xGex quantum wells by spectroscopic ellipsometry. Applied Physics Letters, 77 (3). 367-369 doi:10.1063/1.126978
Plain TextBroschwitz, M., Dettmer, K., Schoenes, J. (2000) Independent determination of Ge content in thin Si1−xGex quantum wells by spectroscopic ellipsometry. Applied Physics Letters, 77 (3). 367-369 doi:10.1063/1.126978
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Bendayan, M., Beserman, R., Dettmer, K. (1997) Influence of quasi-two-dimensional doping on the Raman spectrum of Si1−xGex/Si quantum wells. Journal of Applied Physics, 81 (12). 7956-7960 doi:10.1063/1.365370
Mukerjee, Subroto, Venkataraman, V. (2000) Characterization of strain in Si1−xGex films using multiple angle of incidence ellipsometry. Applied Physics Letters, 77 (22). 3529-3531 doi:10.1063/1.1329165
Griglione, Michelle, Anderson, Timothy J., Haddara, Yaser M., Law, Mark E., Jones, Kevin S., van den Bogaard, Alex (2000) Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients. Journal of Applied Physics, 88 (3). 1366-1372 doi:10.1063/1.373825
de Sande, J. C. G., Rodríguez, A., Rodríguez, T. (1995) Spectroscopic ellipsometry determination of the refractive index of strained Si1−xGex layers in the near‐infrared wavelength range (0.9–1.7 μm). Applied Physics Letters, 67 (23). 3402-3404 doi:10.1063/1.114907
Vergöhl, Michael, Dettmer, Klaus, Kessler, Franz Rudolf (1997) Magneto-optical dispersion of Si1−xGex epitaxial layers and Si/Ge superlattices. Journal of Applied Physics, 81 (3). 1434-1441 doi:10.1063/1.363881
Karunasiri, R. P. G., Park, J. S., Mii, Y. J., Wang, K. L. (1990) Intersubband absorption in Si1−xGex/Si multiple quantum wells. Applied Physics Letters, 57 (24). 2585-2587 doi:10.1063/1.103823
Zheng, Y.-J., Lam, A. M., Engstrom, J. R. (1999) Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films. Applied Physics Letters, 75 (6). 817-819 doi:10.1063/1.124523
Weidner, M., Zaumseil, P., Eichler, M. (1993) Determination of Thickness and Ge Content of Strained Si1-xGex Layers on Si Substrate by Two-Wavelength Ellipsometry. physica status solidi (a), 136 (1). 131-138 doi:10.1002/pssa.2211360116
Freiman, W., Eyal, A., Khait, Yu. L., Beserman, R., Dettmer, K. (1996) Kinetics of processes in the Ti–Si1−xGex systems. Applied Physics Letters, 69 (25). 3821-3823 doi:10.1063/1.117116
Lugo-Saldaña, J. F.; Ramirez-Hintze, E.; Alanis, J.; Rodriguez, A. G. (2025) Optimal Ge composition of Cu2(Sn1−xGex)S3 thin films for solar light absorption determined by spectroscopic ellipsometry. Journal of Applied Physics, 138 (3). doi:10.1063/5.0276632
Kawaguchi, K., Shiraki, Y., Usami, N., Zhang, J., Woods, N. J., Breton, G., Parry, G. (2001) Fabrication of strain-balanced Si/Si1−xGex multiple quantum wells on Si1−yGey virtual substrates and their optical properties. Applied Physics Letters, 79 (3). 344-346 doi:10.1063/1.1387263
 
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