Patriarche, G., Sagnes, I., Boucaud, P., Le Thanh, V., Bouchier, D., Hernandez, C., Campidelli, Y., Bensahel, D. (2000) Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition. Applied Physics Letters, 77 (3). 370-372 doi:10.1063/1.126979
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition | ||
Journal | Applied Physics Letters | ||
Authors | Patriarche, G. | Author | |
Sagnes, I. | Author | ||
Boucaud, P. | Author | ||
Le Thanh, V. | Author | ||
Bouchier, D. | Author | ||
Hernandez, C. | Author | ||
Campidelli, Y. | Author | ||
Bensahel, D. | Author | ||
Year | 2000 (July 17) | Volume | 77 |
Issue | 3 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.126979Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8528068 | Long-form Identifier | mindat:1:5:8528068:9 |
GUID | 0 | ||
Full Reference | Patriarche, G., Sagnes, I., Boucaud, P., Le Thanh, V., Bouchier, D., Hernandez, C., Campidelli, Y., Bensahel, D. (2000) Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition. Applied Physics Letters, 77 (3). 370-372 doi:10.1063/1.126979 | ||
Plain Text | Patriarche, G., Sagnes, I., Boucaud, P., Le Thanh, V., Bouchier, D., Hernandez, C., Campidelli, Y., Bensahel, D. (2000) Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition. Applied Physics Letters, 77 (3). 370-372 doi:10.1063/1.126979 | ||
In | (2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing |
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