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Takeno, Hiroshi, Sunakawa, Ken, Suezawa, Masashi (2000) Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon. Applied Physics Letters, 77 (3). 376-378 doi:10.1063/1.126981

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon
JournalApplied Physics Letters
AuthorsTakeno, HiroshiAuthor
Sunakawa, KenAuthor
Suezawa, MasashiAuthor
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126981Search in ResearchGate
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Mindat Ref. ID8528070Long-form Identifiermindat:1:5:8528070:4
GUID0
Full ReferenceTakeno, Hiroshi, Sunakawa, Ken, Suezawa, Masashi (2000) Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon. Applied Physics Letters, 77 (3). 376-378 doi:10.1063/1.126981
Plain TextTakeno, Hiroshi, Sunakawa, Ken, Suezawa, Masashi (2000) Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon. Applied Physics Letters, 77 (3). 376-378 doi:10.1063/1.126981
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Wang, Q., Ho, Ihsiu (2006) High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers. Applied Physics Letters, 88 (15). 154107pp. doi:10.1063/1.2195099
Ono, Toshiaki, Rozgonyi, George A., Asayama, Eiichi, Horie, Hiroshi, Tsuya, Hideki, Sueoka, Koji (1999) Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers. Applied Physics Letters, 74 (24). 3648-3650 doi:10.1063/1.123210
Oates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
Wijaranakula, W. (1992) Oxygen precipitation and defects in heavily doped Czochralski silicon. Journal of Applied Physics, 72 (7). 2713-2723 doi:10.1063/1.351521
Takeno, Hiroshi, Hayamizu, Yoshinori, Miki, Katsuhiko (1998) Diffusivity of oxygen in Czochralski silicon at 400–750 °C. Journal of Applied Physics, 84 (6). 3113-3117 doi:10.1063/1.368509
Yamazaki, Hideyuki, Matsushita, Hiroshi, Sugamoto, Junji, Tsuchiya, Norihiko (2000) Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon. Journal of Applied Physics, 87 (9). 4194-4197 doi:10.1063/1.373051
Vanhellemont, Jan, Suezawa, Masashi, Yonenaga, Ichiro (2010) On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon. Journal of Applied Physics, 108 (1). 16105pp. doi:10.1063/1.3449080
Wijaranakula, W. (1993) Effect of point defect reactions on behavior of boron and oxygen in degenerately doped Czochralski silicon. Applied Physics Letters, 62 (23). 2974-2976 doi:10.1063/1.109161
Shimura, F., Hockett, R. S. (1986) Nitrogen effect on oxygen precipitation in Czochralski silicon. Applied Physics Letters, 48 (3). 224-226 doi:10.1063/1.96564
Takahashi, Hideki, Kaneta, , Suezawa, Masashi (1998) Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon. Japanese Journal of Applied Physics, 37. 1689-1692 doi:10.1143/jjap.37.1689
Hatakeyama, H., Suezawa, M. (1997) Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal. Journal of Applied Physics, 82 (10). 4945-4951 doi:10.1063/1.366361
 
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