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Kurtz, Steven R., Allerman, A. A., Seager, C. H., Sieg, R. M., Jones, E. D. (2000) Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen. Applied Physics Letters, 77 (3). 400-402 doi:10.1063/1.126989

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Reference TypeJournal (article/letter/editorial)
TitleMinority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
JournalApplied Physics Letters
AuthorsKurtz, Steven R.Author
Allerman, A. A.Author
Seager, C. H.Author
Sieg, R. M.Author
Jones, E. D.Author
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126989Search in ResearchGate
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Mindat Ref. ID8528078Long-form Identifiermindat:1:5:8528078:6
GUID0
Full ReferenceKurtz, Steven R., Allerman, A. A., Seager, C. H., Sieg, R. M., Jones, E. D. (2000) Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen. Applied Physics Letters, 77 (3). 400-402 doi:10.1063/1.126989
Plain TextKurtz, Steven R., Allerman, A. A., Seager, C. H., Sieg, R. M., Jones, E. D. (2000) Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen. Applied Physics Letters, 77 (3). 400-402 doi:10.1063/1.126989
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Kurtz, Steven R., Klem, J. F., Allerman, A. A., Sieg, R. M., Seager, C. H., Jones, E. D. (2002) Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy. Applied Physics Letters, 80 (8). 1379-1381 doi:10.1063/1.1453480
Kwon, D., Kaplar, R. J., Ringel, S. A., Allerman, A. A., Kurtz, Steven R., Jones, E. D. (1999) Deep levels in p-type InGaAsN lattice matched to GaAs. Applied Physics Letters, 74 (19). 2830-2832 doi:10.1063/1.124028
Kurtz, Steven R., Allerman, A. A., Jones, E. D., Gee, J. M., Banas, J. J., Hammons, B. E. (1999) InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs. Applied Physics Letters, 74 (5). 729-731 doi:10.1063/1.123105
Kaplar, R. J., Arehart, A. R., Ringel, S. A., Allerman, A. A., Sieg, R. M., Kurtz, Steven R. (2001) Deep levels and their impact on generation current in Sn-doped InGaAsN. Journal of Applied Physics, 90 (7). 3405-3408 doi:10.1063/1.1396832
Kaplar, R. J., Ringel, S. A., Kurtz, Steven R., Klem, J. F., Allerman, A. A. (2002) Deep-level defects in InGaAsN grown by molecular-beam epitaxy. Applied Physics Letters, 80 (25). 4777-4779 doi:10.1063/1.1483912
Mair, R. A., Lin, J. Y., Jiang, H. X., Jones, E. D., Allerman, A. A., Kurtz, S. R. (2000) Time-resolved photoluminescence studies of InxGa1−xAs1−yNy. Applied Physics Letters, 76 (2). 188-190 doi:10.1063/1.125698
Chow, W. W., Jones, E. D., Modine, N. A., Allerman, A. A., Kurtz, S. R. (1999) Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells. Applied Physics Letters, 75 (19). 2891-2893 doi:10.1063/1.125181
Seager, C. H., Myers, S. M., Wright, A. F., Koleske, D. D., Allerman, A. A. (2002) Drift, diffusion, and trapping of hydrogen in p-type GaN. Journal of Applied Physics, 92 (12). 7246-7252 doi:10.1063/1.1520719
Ahrenkiel, R. K., Dunlavy, D. J., Hamaker, H. C., Green, R. T., Lewis, C. R., Hayes, R. E., Fardi, H. (1986) Time‐of‐flight studies of minority‐carrier diffusion in AlxGa1−xAs homojunctions. Applied Physics Letters, 49 (12). 725-727 doi:10.1063/1.97580
Kurtz, S. R., Allerman, A. A., Biefeld, R. M., Baucom, K. C. (1998) High slope efficiency, “cascaded” midinfrared lasers with type I InAsSb quantum wells. Applied Physics Letters, 72 (17). 2093-2095 doi:10.1063/1.121286
Seager, C. H. (1982) Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon. Applied Physics Letters, 41 (9). 855-857 doi:10.1063/1.93675
 
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