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Garcı́a, J. M., Silveira, J. P., Briones, F. (2000) Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001). Applied Physics Letters, 77 (3). 409-411 doi:10.1063/1.126992

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Reference TypeJournal (article/letter/editorial)
TitleStrain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
JournalApplied Physics Letters
AuthorsGarcı́a, J. M.Author
Silveira, J. P.Author
Briones, F.Author
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126992Search in ResearchGate
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Mindat Ref. ID8528081Long-form Identifiermindat:1:5:8528081:0
GUID0
Full ReferenceGarcı́a, J. M., Silveira, J. P., Briones, F. (2000) Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001). Applied Physics Letters, 77 (3). 409-411 doi:10.1063/1.126992
Plain TextGarcı́a, J. M., Silveira, J. P., Briones, F. (2000) Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001). Applied Physics Letters, 77 (3). 409-411 doi:10.1063/1.126992
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Zhang, K., Heyn, Ch., Hansen, W., Schmidt, Th., Falta, J. (2000) Ordering and shape of self-assembled InAs quantum dots on GaAs(001). Applied Physics Letters, 76 (16). 2229-2231 doi:10.1063/1.126305
Paskov, P. P., Holtz, P. O., Monemar, B., Garcia, J. M., Schoenfeld, W. V., Petroff, P. M. (2000) Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots. Applied Physics Letters, 77 (6). 812-814 doi:10.1063/1.1306653
Garcı́a, J. M., Medeiros-Ribeiro, G., Schmidt, K., Ngo, T., Feng, J. L., Lorke, A., Kotthaus, J., Petroff, P. M. (1997) Intermixing and shape changes during the formation of InAs self-assembled quantum dots. Applied Physics Letters, 71 (14). 2014-2016 doi:10.1063/1.119772
Zhang, K., Heyn, Ch., Hansen, W., Schmidt, Th., Falta, J. (2000) Strain status of self-assembled InAs quantum dots. Applied Physics Letters, 77 (9). 1295-1297 doi:10.1063/1.1290152
Kiravittaya, S., Rastelli, A., Schmidt, O. G. (2005) Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution. Applied Physics Letters, 87 (24). 243112pp. doi:10.1063/1.2143125
Garcı́a, J. M., Mankad, T., Holtz, P. O., Wellman, P. J., Petroff, P. M. (1998) Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters, 72 (24). 3172-3174 doi:10.1063/1.121583
Wasserman, D., Lyon, S. A., Hadjipanayi, M., Maciel, A., Ryan, J. F. (2003) Formation of self-assembled InAs quantum dots on (110) GaAs substrates. Applied Physics Letters, 83 (24). 5050-5052 doi:10.1063/1.1633683
Lee, H. S., Lee, J. Y., Kim, T. W., Kim, M. D. (2003) Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 83 (11). 2256-2258 doi:10.1063/1.1612894
Lita, B., Goldman, R. S., Phillips, J. D., Bhattacharya, P. K. (1999) Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 75 (18). 2797-2799 doi:10.1063/1.125153
Wang, J. S., Chen, J. F., Huang, J. L., Wang, P. Y., Guo, X. J. (2000) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots. Applied Physics Letters, 77 (19). 3027-3029 doi:10.1063/1.1323735
Shimomura, K., Kamiya, I. (2015) Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm. Applied Physics Letters, 106 (8). 82103pp. doi:10.1063/1.4913443
 
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