Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F. (2000) Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction. Applied Physics Letters, 77 (3). 412-414 doi:10.1063/1.126993

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Reference Type	Journal (article/letter/editorial)
Title	Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction
Journal	Applied Physics Letters
Authors	Demarest, J.		Author
	Hull, R.		Author
	Schonenberg, K. T.		Author
	Janssens, K. G. F.		Author
Year	2000 (July 17)	Volume	77
Issue	3
Publisher	AIP Publishing
DOI	doi:10.1063/1.126993Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8528082	Long-form Identifier	mindat:1:5:8528082:9
GUID	0
Full Reference	Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F. (2000) Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction. Applied Physics Letters, 77 (3). 412-414 doi:10.1063/1.126993
Plain Text	Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F. (2000) Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction. Applied Physics Letters, 77 (3). 412-414 doi:10.1063/1.126993
In	(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

	Li, J., Anjum, D., Hull, R., Xia, G., Hoyt, J. L. (2005) Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging. Applied Physics Letters, 87 (22). 222111pp. doi:10.1063/1.2135388
	*Hull, R, Wu, C-C, Li, J, Demarest, J (2007) Analysis of Nanoscale Stress Fields in Semiconductor Materials and Devices. Microscopy and Microanalysis, 13. doi:10.1017/s1431927607076787*
	Janssens, Koenraad G. F., Van der Biest, Omer, Vanhellemont, Jan, Maes, Herman E., Hull, Robert (1995) Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation. Applied Physics Letters, 67 (11). 1530-1532 doi:10.1063/1.114482
	Janssens, K. G. F., Van der Biest, O., Vanheliemont, J., Maes, H. E., Hull, R., Bean, J. C. (1995) Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging. Materials Science and Technology, 11. 66-71 doi:10.1179/mst.1995.11.1.66
	*Schmidt, Petra, Haas, Stephan, Levi, A. F. J. (2006) Synthesis of electron transmission in nanoscale semiconductor devices. Applied Physics Letters, 88 (1). 13502pp. doi:10.1063/1.2159102*
	Gribelyuk, M. A., Adam, T. N., Ontalus, V., Ronsheim, P. R., Kimball, L., Schonenberg, K. T. (2011) Electron holography of Si:C films and Si:C-based devices. Journal of Applied Physics, 110 (6). 63522pp. doi:10.1063/1.3630029
	Cooper, D., Rouviere, J., Murray, C. E., Bernier, N., Bruley, J. (2015) Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography. Applied Physics Letters, 106 (4). 42104pp. doi:10.1063/1.4906513
	Stangl, J., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Schmidt, O. G., Eberl, K., Kienzle, O., Ernst, F. (2000) Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy. Applied Physics Letters, 77 (24). 3953-3955 doi:10.1063/1.1333683
	*Ogden, R., Wilkinson, J. M. (1977) Characterization of crystal defects at leakage sites in charge‐coupled devices. Journal of Applied Physics, 48 (1). 412-414 doi:10.1063/1.323343*
	Paschke, K., Geue, T., Barberka, T. A., Bolm, A., Pietsch, U., Rösch, M., Batke, E., Faller, F., Kerkel, K., Oshinowo, J., Forchel, A. (1997) Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction. Applied Physics Letters, 70 (8). 1031-1033 doi:10.1063/1.118473
	Sawano, K., Koh, S., Shiraki, Y., Hirose, Y., Hattori, T., Nakagawa, K. (2003) Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing. Applied Physics Letters, 82 (3). 412-414 doi:10.1063/1.1539557

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Demarest, J., Hull, R., Schonenberg, K. T., Janssens, K. G. F. (2000) Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction. Applied Physics Letters, 77 (3). 412-414 doi:10.1063/1.126993

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