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Shima, Masashi, Sakuma, Yoshiki, Awano, Yuji, Yokoyama, Naoki (2000) Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate. Applied Physics Letters, 77 (3). 441-443 doi:10.1063/1.127003

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Reference TypeJournal (article/letter/editorial)
TitleRandom telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate
JournalApplied Physics Letters
AuthorsShima, MasashiAuthor
Sakuma, YoshikiAuthor
Awano, YujiAuthor
Yokoyama, NaokiAuthor
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.127003Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8528092Long-form Identifiermindat:1:5:8528092:6
GUID0
Full ReferenceShima, Masashi, Sakuma, Yoshiki, Awano, Yuji, Yokoyama, Naoki (2000) Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate. Applied Physics Letters, 77 (3). 441-443 doi:10.1063/1.127003
Plain TextShima, Masashi, Sakuma, Yoshiki, Awano, Yuji, Yokoyama, Naoki (2000) Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate. Applied Physics Letters, 77 (3). 441-443 doi:10.1063/1.127003
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Shima, Masashi, Sakuma, Yoshiki, Sugiyama, Yoshihiro, Awano, Yuji, Yokoyama, Naoki (2001) Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure. Applied Physics Letters, 78 (13). 1930-1932 doi:10.1063/1.1359139
Endoh, Akira, Sakuma, Yoshiki, Takatsu, Motomu, Awano, Yuji, Yokoyama, Naoki (2000) Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses. Journal of Applied Physics, 88 (8). 4745pp. doi:10.1063/1.1308100
Sekiguchi, Takashi, Sakuma, Yoshiki, Awano, Yuji, Yokoyama, Naoki (1998) Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates. Journal of Applied Physics, 83 (9). 4944-4950 doi:10.1063/1.367295
Sugiyama, Yoshihiro, Sakuma, Yoshiki, Muto, Shunichi, Yokoyama, Naoki (1995) Novel InGaAs/GaAs quantum dot structures formed in tetrahedral‐shaped recesses on (111)B GaAs substrate using metalorganic vapor phase epitaxy. Applied Physics Letters, 67 (2). 256-258 doi:10.1063/1.114685
Sakuma, Yoshiki, Sugiyama, Yoshihiro, Awano, Yuji, Yokoyama, Naoki (1998) Semiconductor Quantum Dots Grown On Patterned Substrates. Materia Japan, 37 (12). 1005 doi:10.2320/materia.37.1005
Sugiyama, Yoshihiro, Sakuma, Yoshiki, Muto, Shunichi, Yokoyama, Naoki (1995) Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111)B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 34. 4384-4386 doi:10.1143/jjap.34.4384
Nakajima, Anri, Futatsugi, Toshiro, Kosemura, Kinjiro, Fukano, Tetsu, Yokoyama, Naoki (1997) Room temperature operation of Si single-electron memory with self-aligned floating dot gate. Applied Physics Letters, 70 (13). 1742-1744 doi:10.1063/1.118653
Forbes, L., Miller, D. A. (2008) A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current. Applied Physics Letters, 93 (4). 43517pp. doi:10.1063/1.2966157
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Che, Yongli, Zhang, Yating, Cao, Xiaolong, Song, Xiaoxian, Cao, Mingxuan, Dai, Haitao, Yang, Junbo, Zhang, Guizhong, Yao, Jianquan (2016) Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate. Applied Physics Letters, 109 (1). 13106pp. doi:10.1063/1.4955452
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