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Fukuda, K., Cho, W. J., Arai, K., Suzuki, S., Senzaki, J., Tanaka, T. (2000) Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face. Applied Physics Letters, 77 (6). 866-868 doi:10.1063/1.1306649

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Reference TypeJournal (article/letter/editorial)
TitleEffect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face
JournalApplied Physics Letters
AuthorsFukuda, K.Author
Cho, W. J.Author
Arai, K.Author
Suzuki, S.Author
Senzaki, J.Author
Tanaka, T.Author
Year2000 (August 7)Volume77
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1306649Search in ResearchGate
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Mindat Ref. ID8528229Long-form Identifiermindat:1:5:8528229:8
GUID0
Full ReferenceFukuda, K., Cho, W. J., Arai, K., Suzuki, S., Senzaki, J., Tanaka, T. (2000) Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face. Applied Physics Letters, 77 (6). 866-868 doi:10.1063/1.1306649
Plain TextFukuda, K., Cho, W. J., Arai, K., Suzuki, S., Senzaki, J., Tanaka, T. (2000) Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face. Applied Physics Letters, 77 (6). 866-868 doi:10.1063/1.1306649
In(2000, August) Applied Physics Letters Vol. 77 (6) AIP Publishing

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Fukuda, K., Suzuki, S., Tanaka, T., Arai, K. (2000) Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing. Applied Physics Letters, 76 (12). 1585-1587 doi:10.1063/1.126103
Fukuda, Kenji, Kato, Makoto, Kojima, Kazutoshi, Senzaki, Junji (2004) Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face. Applied Physics Letters, 84 (12). 2088-2090 doi:10.1063/1.1682680
Fukuda, K., Arai, K., Suzuki, S., Tanaka, T. (2001) Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]. Applied Physics Letters, 78 (25). 4045 doi:10.1063/1.1379979
Cho, Won-ju, Kosugi, Ryoji, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2000) Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors. Applied Physics Letters, 77 (8). 1215-1217 doi:10.1063/1.1289806
Cho, Won-ju, Kosugi, Ryoji, Senzaki, Junji, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2000) Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors. Applied Physics Letters, 77 (13). 2054-2056 doi:10.1063/1.1312862
Fukuda, Kenji, Suzuki, Seiji, Senzaki, Junji, Cho, W.J., Tanaka, Tomoyuki, Arai, Kazuo (2001) Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face. Materials Science Forum, 353. 631-634 doi:10.4028/www.scientific.net/msf.353-356.631
Kosugi, Ryoji, Cho, Won-ju, Fukuda, Kenji, Arai, Kazuo, Suzuki, Seiji (2002) High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001). Journal of Applied Physics, 91 (3). 1314-1317 doi:10.1063/1.1428099
Ariyoshi, K., Iijima, R., Harada, S., Kojima, K., Senzaki, J., Tanaka, Y., Takao, K., Shinohe, T. (2015) Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC. Applied Physics Letters, 106 (10). 103506pp. doi:10.1063/1.4914385
Senzaki, Junji, Suzuki, Takuma, Shimozato, Atsushi, Fukuda, Kenji, Arai, Kazuo, Okumura, Hajime (2010) Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing. Materials Science Forum, 645. 685-688 doi:10.4028/www.scientific.net/msf.645-648.685
Suzuki, Seiji, Fukuda, Kenji, Okushi, Hideyo, Nagai, Kiyoko, Sekigawa, Toshihiro, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, Kazuo (2000) Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface. Materials Science Forum, 338. 1073-1076 doi:10.4028/www.scientific.net/msf.338-342.1073
Fukuda, Kenji, Senzaki, Junji, Kushibe, Mitsuhiro, Kojima, Kazutoshi, Kosugi, Ryouji, Suzuki, Seiji, Harada, Shinsuke, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo (2002) A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing. Materials Science Forum, 389. 1057-1060 doi:10.4028/www.scientific.net/msf.389-393.1057
 
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