Reference Type | Journal (article/letter/editorial) |
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Title | Displacement of domain walls under a nanocontact current: Mechanism for magnetoresistance asymmetric switching |
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Journal | Applied Physics Letters |
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Authors | Osipov, V. V. | Author |
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Ponizovskaya, E. V. | Author |
Garcı́a, N. | Author |
Year | 2001 (October) | Volume | 79 |
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Issue | 14 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.1403315Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8530072 | Long-form Identifier | mindat:1:5:8530072:5 |
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GUID | 0 |
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Full Reference | Osipov, V. V., Ponizovskaya, E. V., Garcı́a, N. (2001) Displacement of domain walls under a nanocontact current: Mechanism for magnetoresistance asymmetric switching. Applied Physics Letters, 79 (14). 2222-2224 doi:10.1063/1.1403315 |
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Plain Text | Osipov, V. V., Ponizovskaya, E. V., Garcı́a, N. (2001) Displacement of domain walls under a nanocontact current: Mechanism for magnetoresistance asymmetric switching. Applied Physics Letters, 79 (14). 2222-2224 doi:10.1063/1.1403315 |
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In | (2001, October) Applied Physics Letters Vol. 79 (14) AIP Publishing |
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