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Zhang, Z. G., Freitas, P. P., Ramos, A. R., Barradas, N. P., Soares, J. C. (2001) Resistance decrease in spin tunnel junctions by control of natural oxidation conditions. Applied Physics Letters, 79 (14). 2219-2221 doi:10.1063/1.1408909

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Reference TypeJournal (article/letter/editorial)
TitleResistance decrease in spin tunnel junctions by control of natural oxidation conditions
JournalApplied Physics Letters
AuthorsZhang, Z. G.Author
Freitas, P. P.Author
Ramos, A. R.Author
Barradas, N. P.Author
Soares, J. C.Author
Year2001 (October)Volume79
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1408909Search in ResearchGate
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Mindat Ref. ID8530123Long-form Identifiermindat:1:5:8530123:8
GUID0
Full ReferenceZhang, Z. G., Freitas, P. P., Ramos, A. R., Barradas, N. P., Soares, J. C. (2001) Resistance decrease in spin tunnel junctions by control of natural oxidation conditions. Applied Physics Letters, 79 (14). 2219-2221 doi:10.1063/1.1408909
Plain TextZhang, Z. G., Freitas, P. P., Ramos, A. R., Barradas, N. P., Soares, J. C. (2001) Resistance decrease in spin tunnel junctions by control of natural oxidation conditions. Applied Physics Letters, 79 (14). 2219-2221 doi:10.1063/1.1408909
In(2001, October) Applied Physics Letters Vol. 79 (14) AIP Publishing


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