Nagashima, Takeshi, Hangyo, Masanori (2001) Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry. Applied Physics Letters, 79 (24). 3917-3919 doi:10.1063/1.1426258
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry | ||
| Journal | Applied Physics Letters | ||
| Authors | Nagashima, Takeshi | Author | |
| Hangyo, Masanori | Author | ||
| Year | 2001 (December 10) | Volume | 79 |
| Issue | 24 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.1426258Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8530712 | Long-form Identifier | mindat:1:5:8530712:6 |
| GUID | 0 | ||
| Full Reference | Nagashima, Takeshi, Hangyo, Masanori (2001) Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry. Applied Physics Letters, 79 (24). 3917-3919 doi:10.1063/1.1426258 | ||
| Plain Text | Nagashima, Takeshi, Hangyo, Masanori (2001) Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry. Applied Physics Letters, 79 (24). 3917-3919 doi:10.1063/1.1426258 | ||
| In | (2001, December) Applied Physics Letters Vol. 79 (24) AIP Publishing | ||
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