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Nakahara, K., Takasu, H., Fons, P., Yamada, A., Iwata, K., Matsubara, K., Hunger, R., Niki, S. (2001) Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy. Applied Physics Letters, 79 (25). 4139-4141 doi:10.1063/1.1424066

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Reference TypeJournal (article/letter/editorial)
TitleInteractions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy
JournalApplied Physics Letters
AuthorsNakahara, K.Author
Takasu, H.Author
Fons, P.Author
Yamada, A.Author
Iwata, K.Author
Matsubara, K.Author
Hunger, R.Author
Niki, S.Author
Year2001 (December 17)Volume79
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.1424066Search in ResearchGate
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Mindat Ref. ID8530731Long-form Identifiermindat:1:5:8530731:1
GUID0
Full ReferenceNakahara, K., Takasu, H., Fons, P., Yamada, A., Iwata, K., Matsubara, K., Hunger, R., Niki, S. (2001) Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy. Applied Physics Letters, 79 (25). 4139-4141 doi:10.1063/1.1424066
Plain TextNakahara, K., Takasu, H., Fons, P., Yamada, A., Iwata, K., Matsubara, K., Hunger, R., Niki, S. (2001) Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy. Applied Physics Letters, 79 (25). 4139-4141 doi:10.1063/1.1424066
In(2001, December) Applied Physics Letters Vol. 79 (25) AIP Publishing

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