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Lim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2002) Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices. Applied Physics Letters, 80 (14). 2481-2483 doi:10.1063/1.1465500

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Reference TypeJournal (article/letter/editorial)
TitleStrain-induced anisotropic Ge diffusion in SiGe/Si superlattices
JournalApplied Physics Letters
AuthorsLim, Y. S.Author
Lee, J. Y.Author
Kim, H. S.Author
Moon, D. W.Author
Year2002 (April 8)Volume80
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1465500Search in ResearchGate
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Mindat Ref. ID8531570Long-form Identifiermindat:1:5:8531570:9
GUID0
Full ReferenceLim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2002) Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices. Applied Physics Letters, 80 (14). 2481-2483 doi:10.1063/1.1465500
Plain TextLim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2002) Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices. Applied Physics Letters, 80 (14). 2481-2483 doi:10.1063/1.1465500
In(2002, April) Applied Physics Letters Vol. 80 (14) AIP Publishing

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Lim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W. (2000) Strain-induced diffusion in a strained Si1āˆ’xGex/Si heterostructure. Applied Physics Letters, 77 (25). 4157-4159 doi:10.1063/1.1327280
Lim, Y. S., Jeong, J. S., Lee, J. Y., Kim, H. S., Shon, H. K., Kim, H. K., Moon, D. W. (2001) Dry thermal oxidation of a graded SiGe layer. Applied Physics Letters, 79 (22). 3606-3608 doi:10.1063/1.1415373
Jang, C.H., Sardela, M.R., Kim, S.-H., Song, Y.-J., Lee, N.-E. (2006) Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(001). Applied Surface Science, 252. 5326-5330 doi:10.1016/j.apsusc.2005.12.104
Moon, D. W., Lee, H. I., Cho, B., Foo, Y. L., Spila, T., Hong, S., Greene, J. E. (2003) Direct measurements of strain depth profiles in Ge/Si(001) nanostructures. Applied Physics Letters, 83 (25). 5298-5300 doi:10.1063/1.1635074
Kahng, S.-J., Ha, Y. H., Moon, D. W., Kuk, Y. (2000) Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant. Applied Physics Letters, 77 (7). 981pp. doi:10.1063/1.1288005
Kahng, S.-J., Ha, Y. H., Park, J.-Y., Kim, S., Moon, D. W., Kuk, Y. (1998) Hydrogen-Surfactant Mediated Growth of Ge on Si(001). Physical Review Letters, 80 (22). 4931-4934 doi:10.1103/physrevlett.80.4931
Kim, T. W., Jung, M., Lee, D. U., Lim, Y. S., Lee, J. Y. (1998) Strain effects in lattice-mismatched InxGa1āˆ’xAs/InyAl1āˆ’yAs coupled double quantum wells. Applied Physics Letters, 73 (1). 61-63 doi:10.1063/1.121723
Fukatsu, S., Mera, Y., Inoue, M., Maeda, K., Akiyama, H., Sakaki, H. (1996) Timeā€resolved Dā€band luminescence in strainā€relieved SiGe/Si. Applied Physics Letters, 68 (14). 1889-1891 doi:10.1063/1.116284
Liu, C. W., Lee, M. H., Lee, Y. C., Chen, P. S., Yu, C.-Y., Wei, J.-Y., Maikap, S. (2004) Evidence of Siāˆ•SiGe heterojunction roughness scattering. Applied Physics Letters, 85 (21). 4947-4949 doi:10.1063/1.1828224
Buca, D., Winnerl, S., Lenk, S., Buchal, Ch., Xu, D.-X. (2002) Fast time response from Siā€“SiGe undulating layer superlattices. Applied Physics Letters, 80 (22). 4172-4174 doi:10.1063/1.1483121
Kim, D. H., Yang, J. S., Lee, K. W., Bu, S. D., Noh, T. W., Oh, S.-J., Kim, Y.-W., Chung, J.-S., Tanaka, H., Lee, H. Y., Kawai, T. (2002) Formation of Co nanoclusters in epitaxial Ti0.96Co0.04O2 thin films and their ferromagnetism. Applied Physics Letters, 81 (13). 2421-2423 doi:10.1063/1.1509477
 
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