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Kwon, Young Hae, Park, C. J., Lee, W. C., Fu, D. J., Shon, Y., Kang, T. W., Hong, C. Y., Cho, H. Y., Wang, Kang L. (2002) Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si. Applied Physics Letters, 80 (14). 2502-2504 doi:10.1063/1.1467617

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Reference TypeJournal (article/letter/editorial)
TitleMemory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si
JournalApplied Physics Letters
AuthorsKwon, Young HaeAuthor
Park, C. J.Author
Lee, W. C.Author
Fu, D. J.Author
Shon, Y.Author
Kang, T. W.Author
Hong, C. Y.Author
Cho, H. Y.Author
Wang, Kang L.Author
Year2002 (April 8)Volume80
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1467617Search in ResearchGate
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Mindat Ref. ID8531574Long-form Identifiermindat:1:5:8531574:5
GUID0
Full ReferenceKwon, Young Hae, Park, C. J., Lee, W. C., Fu, D. J., Shon, Y., Kang, T. W., Hong, C. Y., Cho, H. Y., Wang, Kang L. (2002) Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si. Applied Physics Letters, 80 (14). 2502-2504 doi:10.1063/1.1467617
Plain TextKwon, Young Hae, Park, C. J., Lee, W. C., Fu, D. J., Shon, Y., Kang, T. W., Hong, C. Y., Cho, H. Y., Wang, Kang L. (2002) Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si. Applied Physics Letters, 80 (14). 2502-2504 doi:10.1063/1.1467617
In(2002, April) Applied Physics Letters Vol. 80 (14) AIP Publishing

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