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Guo, Jing, Lundstrom, Mark, Datta, Supriyo (2002) Performance projections for ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 80 (17). 3192-3194 doi:10.1063/1.1474604

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Reference TypeJournal (article/letter/editorial)
TitlePerformance projections for ballistic carbon nanotube field-effect transistors
JournalApplied Physics Letters
AuthorsGuo, JingAuthor
Lundstrom, MarkAuthor
Datta, SupriyoAuthor
Year2002 (April 29)Volume80
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.1474604Search in ResearchGate
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Mindat Ref. ID8531803Long-form Identifiermindat:1:5:8531803:4
GUID0
Full ReferenceGuo, Jing, Lundstrom, Mark, Datta, Supriyo (2002) Performance projections for ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 80 (17). 3192-3194 doi:10.1063/1.1474604
Plain TextGuo, Jing, Lundstrom, Mark, Datta, Supriyo (2002) Performance projections for ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 80 (17). 3192-3194 doi:10.1063/1.1474604
In(2002, April) Applied Physics Letters Vol. 80 (17) AIP Publishing

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Guo, Jing, Lundstrom, Mark (2005) Role of phonon scattering in carbon nanotube field-effect transistors. Applied Physics Letters, 86 (19). 193103pp. doi:10.1063/1.1923183
Guo, Jing, Goasguen, Sebastien, Lundstrom, Mark, Datta, Supriyo (2002) Metal–insulator–semiconductor electrostatics of carbon nanotubes. Applied Physics Letters, 81 (8). 1486-1488 doi:10.1063/1.1502188
Javey, Ali, Guo, Jing, Wang, Qian, Lundstrom, Mark, Dai, Hongjie (2003) Ballistic carbon nanotube field-effect transistors. Nature, 424 (6949). 654-657 doi:10.1038/nature01797
Wang, Jing, Polizzi, Eric, Ghosh, Avik, Datta, Supriyo, Lundstrom, Mark (2005) Theoretical investigation of surface roughness scattering in silicon nanowire transistors. Applied Physics Letters, 87 (4). 43101pp. doi:10.1063/1.2001158
Rhew, Jung-Hoon, Lundstrom, Mark S. (2002) Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 92 (9). 5196-5202 doi:10.1063/1.1509098
Wang, Jing, Rahman, Anisur, Ghosh, Avik, Klimeck, Gerhard, Lundstrom, Mark (2005) Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations. Applied Physics Letters, 86 (9). 93113pp. doi:10.1063/1.1873055
Kim, Raseong, Datta, Supriyo, Lundstrom, Mark S. (2009) Influence of dimensionality on thermoelectric device performance. Journal of Applied Physics, 105 (3). 34506pp. doi:10.1063/1.3074347
Koswatta, Siyuranga O., Lundstrom, Mark S., Anantram, M. P., Nikonov, Dmitri E. (2005) Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors. Applied Physics Letters, 87 (25). 253107pp. doi:10.1063/1.2146065
Ouyang, Yijian, Yoon, Youngki, Fodor, James K., Guo, Jing (2006) Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors. Applied Physics Letters, 89 (20). 203107pp. doi:10.1063/1.2387876
Ouyang, Yijian, Campbell, Paul, Guo, Jing (2008) Analysis of ballistic monolayer and bilayer graphene field-effect transistors. Applied Physics Letters, 92 (6). 63120pp. doi:10.1063/1.2841664
Koswatta, Siyuranga O., Hasan, Sayed, Lundstrom, Mark S., Anantram, M. P., Nikonov, Dmitri E. (2006) Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias. Applied Physics Letters, 89 (2). 23125pp. doi:10.1063/1.2218322
 
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