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Arora, Vijay K. (2002) Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field. Applied Physics Letters, 80 (20). 3763-3765 doi:10.1063/1.1480119

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Reference TypeJournal (article/letter/editorial)
TitleDrift diffusion and Einstein relation for electrons in silicon subjected to a high electric field
JournalApplied Physics Letters
AuthorsArora, Vijay K.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480119Search in ResearchGate
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Mindat Ref. ID8532055Long-form Identifiermindat:1:5:8532055:2
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Full ReferenceArora, Vijay K. (2002) Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field. Applied Physics Letters, 80 (20). 3763-3765 doi:10.1063/1.1480119
Plain TextArora, Vijay K. (2002) Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field. Applied Physics Letters, 80 (20). 3763-3765 doi:10.1063/1.1480119
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Bartelink, D. J., Persky, G. (1970) DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD. Applied Physics Letters, 16 (5). 191-194 doi:10.1063/1.1653157
Arora, Vijay K., Chek, Desmond C. Y., Tan, Michael L. P., Hashim, Abdul Manaf (2010) Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field. Journal of Applied Physics, 108 (11). 114314pp. doi:10.1063/1.3514128
Arora, Vijay K., Mui, David S. L., Morkoç, Hadis (1987) High‐field electron‐drift velocity and temperature in gallium phosphide. Journal of Applied Physics, 61 (9). 4703-4704 doi:10.1063/1.338045
Rodriguez, V., Nicolet, M‐A. (1969) Drift Velocity of Electrons in Silicon at High Electric Fields from 4.2° to 300°K. Journal of Applied Physics, 40 (2). 496-498 doi:10.1063/1.1657427
Zolotoyabko, E., Quintana, J. P., Hoerman, B. H., Wessels, B. W. (2002) Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric field. Applied Physics Letters, 80 (17). 3159-3161 doi:10.1063/1.1476057
Samudra, Ganesh, Chua, Soo Jin, Ghatak, Ajoy K., Arora, Vijay K. (1992) High‐field electron transport for ellipsoidal multivalley band structure of silicon. Journal of Applied Physics, 72 (10). 4700-4704 doi:10.1063/1.352075
Arora, Vijay K., Shafinaz Zainal Abidin, Mastura, Tembhurne, Saurabh, Riyadi, Munawar A. (2011) Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor. Applied Physics Letters, 99 (6). 63106pp. doi:10.1063/1.3621885
Canali, C., Jacoboni, C., Ottaviani, G., Alberigi‐Quaranta, A. (1975) High‐field diffusion of electrons in silicon. Applied Physics Letters, 27 (5). 278-280 doi:10.1063/1.88465
Thornber, K. K. (1980) Relation of drift velocity to low-field mobility and high-field saturation velocity. Journal of Applied Physics, 51 (4). 2127pp. doi:10.1063/1.327885
Roichman, Yohai, Tessler, Nir (2002) Generalized Einstein relation for disordered semiconductors—implications for device performance. Applied Physics Letters, 80 (11). 1948-1950 doi:10.1063/1.1461419
Arora, Vijay K., Tan, Michael L. P., Gupta, Chirag (2012) High-field transport in a graphene nanolayer. Journal of Applied Physics, 112 (11). 114330pp. doi:10.1063/1.4769300
 
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