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Takeuchi, Hideki, Ranade, Pushkar, Subramanian, Vivek, King, Tsu-Jae (2002) Observation of dopant-mediated intermixing at Ge/Si Interface. Applied Physics Letters, 80 (20). 3706-3708 doi:10.1063/1.1480485

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Reference TypeJournal (article/letter/editorial)
TitleObservation of dopant-mediated intermixing at Ge/Si Interface
JournalApplied Physics Letters
AuthorsTakeuchi, HidekiAuthor
Ranade, PushkarAuthor
Subramanian, VivekAuthor
King, Tsu-JaeAuthor
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480485Search in ResearchGate
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Mindat Ref. ID8532066Long-form Identifiermindat:1:5:8532066:8
GUID0
Full ReferenceTakeuchi, Hideki, Ranade, Pushkar, Subramanian, Vivek, King, Tsu-Jae (2002) Observation of dopant-mediated intermixing at Ge/Si Interface. Applied Physics Letters, 80 (20). 3706-3708 doi:10.1063/1.1480485
Plain TextTakeuchi, Hideki, Ranade, Pushkar, Subramanian, Vivek, King, Tsu-Jae (2002) Observation of dopant-mediated intermixing at Ge/Si Interface. Applied Physics Letters, 80 (20). 3706-3708 doi:10.1063/1.1480485
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Takeuchi, Hideki, Ranade, Pushkar, King, Tsu-Jae (2004) Low-temperature dopant activation technology using elevated Ge-S/D structure. Applied Surface Science, 224. 73-76 doi:10.1016/j.apsusc.2003.08.094
Takeuchi, Hideki, King, Tsu-Jae (2003) Scaling limits of hafnium–silicate films for gate-dielectric applications. Applied Physics Letters, 83 (4). 788-790 doi:10.1063/1.1594829
Ha, Daewon, Ranade, Pushkar, Choi, Yang-Kyu, Lee, Jeong-Soo, King, Tsu-Jae, Hu, Chenming (2003) Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs. Japanese Journal of Applied Physics, 42. 1979-1982 doi:10.1143/jjap.42.1979
Xu, Nuo, Takeuchi, Hideki, Hytha, Marek, Cody, Nyles W., Stephenson, Robert J., Kwak, Byungil, Cha, Seon Yong, Mears, Robert J., King Liu, Tsu-Jae (2015) Electron mobility enhancement in (100) oxygen-inserted silicon channel. Applied Physics Letters, 107 (12). 123502pp. doi:10.1063/1.4931431
Takeuchi, Hideki, King, Tsu-Jae (2004) Surface Charge Analysis of Ultrathin HfO[sub 2], SiO[sub 2], and Si[sub 3]N[sub 4]. Journal of the Electrochemical Society, 151. doi:10.1149/1.1636740
Yeo, Yee-Chia, King, Tsu-Jae, Hu, Chenming (2002) Direct tunneling leakage current and scalability of alternative gate dielectrics. Applied Physics Letters, 81 (11). 2091-2093 doi:10.1063/1.1506941
Cao, Min, King, Tsu‐Jae, Saraswat, Krishna C. (1992) Determination of the densities of gap states in hydrogenated polycrystalline Si and Si0.8Ge0.2films. Applied Physics Letters, 61 (6). 672-674 doi:10.1063/1.107818
Shutthanandan, V., Thevuthasan, S., Liang, Y., Adams, E. M., Yu, Z., Droopad, R. (2002) Direct observation of atomic disordering at the SrTiO3/Si interface due to oxygen diffusion. Applied Physics Letters, 80 (10). 1803-1805 doi:10.1063/1.1456261
Abbati, I., Braicovich, L., Franciosi, A. (1980) Evidence of intermixing at Si(III)/Au interface at liquid nitrogen temperature. Physics Letters A, 80. 69-71 doi:10.1016/0375-9601(80)90457-0
Raiteri, P., Miglio, Leo, Valentinotti, F., Celino, M. (2002) Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate. Applied Physics Letters, 80 (20). 3736-3738 doi:10.1063/1.1475775
Leite, Marina S., Kamins, T. I., Medeiros-Ribeiro, G. (2009) Control of Ge/Si intermixing during Ge island growth. Applied Physics Letters, 94 (5). 53118pp. doi:10.1063/1.3078289
 
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