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Alonso, C. F., Hernández, M. P., Casielles, E., Peña, J. L. (2002) Determination of the barrier-height fluctuations based on the parallel-noninteracting diode model. Applied Physics Letters, 80 (20). 3751-3753 doi:10.1063/1.1480882

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the barrier-height fluctuations based on the parallel-noninteracting diode model
JournalApplied Physics Letters
AuthorsAlonso, C. F.Author
Hernández, M. P.Author
Casielles, E.Author
Peña, J. L.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480882Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8532074Long-form Identifiermindat:1:5:8532074:7
GUID0
Full ReferenceAlonso, C. F., Hernández, M. P., Casielles, E., Peña, J. L. (2002) Determination of the barrier-height fluctuations based on the parallel-noninteracting diode model. Applied Physics Letters, 80 (20). 3751-3753 doi:10.1063/1.1480882
Plain TextAlonso, C. F., Hernández, M. P., Casielles, E., Peña, J. L. (2002) Determination of the barrier-height fluctuations based on the parallel-noninteracting diode model. Applied Physics Letters, 80 (20). 3751-3753 doi:10.1063/1.1480882
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Hernández, M P, Alonso, C F, Peña, J L (2001) Barrier height determination in homogeneous nonideal Schottky contacts. Journal of Physics D: Applied Physics, 34. 1157-1161 doi:10.1088/0022-3727/34/8/305
Hernández, M.P., Alonso, C.F., Martel, A., Casielles, E., Rejón, V., Peña, J.L. (2000) Barrier Height Behavior for In/CdTe Polycrystalline Junction. physica status solidi (b), 220 (1). 209-213 doi:10.1002/1521-3951(200007)220:1<209::aid-pssb209>3.0.co;2-x
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