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Markus, A., Fiore, A., Ganière, J. D., Oesterle, U., Chen, J. X., Deveaud, B., Ilegems, M., Riechert, H. (2002) Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm. Applied Physics Letters, 80 (6). 911-913 doi:10.1063/1.1447595

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Reference TypeJournal (article/letter/editorial)
TitleComparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
JournalApplied Physics Letters
AuthorsMarkus, A.Author
Fiore, A.Author
Ganière, J. D.Author
Oesterle, U.Author
Chen, J. X.Author
Deveaud, B.Author
Ilegems, M.Author
Riechert, H.Author
Year2002 (February 11)Volume80
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1447595Search in ResearchGate
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Mindat Ref. ID8532616Long-form Identifiermindat:1:5:8532616:7
GUID0
Full ReferenceMarkus, A., Fiore, A., Ganière, J. D., Oesterle, U., Chen, J. X., Deveaud, B., Ilegems, M., Riechert, H. (2002) Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm. Applied Physics Letters, 80 (6). 911-913 doi:10.1063/1.1447595
Plain TextMarkus, A., Fiore, A., Ganière, J. D., Oesterle, U., Chen, J. X., Deveaud, B., Ilegems, M., Riechert, H. (2002) Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm. Applied Physics Letters, 80 (6). 911-913 doi:10.1063/1.1447595
In(2002, February) Applied Physics Letters Vol. 80 (6) AIP Publishing

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Fiore, A., Borri, P., Langbein, W., Hvam, J. M., Oesterle, U., Houdré, R., Stanley, R. P., Ilegems, M. (2000) Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm. Applied Physics Letters, 76 (23). 3430-3432 doi:10.1063/1.126668
Chen, J. X., Oesterle, U., Fiore, A., Stanley, R. P., Ilegems, M., Todaro, T. (2001) Matrix effects on the structural and optical properties of InAs quantum dots. Applied Physics Letters, 79 (22). 3681-3683 doi:10.1063/1.1416162
Chen, J. X., Markus, A., Fiore, A., Oesterle, U., Stanley, R. P., Carlin, J. F., Houdré, R., Ilegems, M., Lazzarini, L., Nasi, L., Todaro, M. T., Piscopiello, E., Cingolani, R., Catalano, M., Katcki, J., Ratajczak, J. (2002) Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications. Journal of Applied Physics, 91 (10). 6710pp. doi:10.1063/1.1476069
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Fiore, A., Chen, J. X., Ilegems, M. (2002) Scaling quantum-dot light-emitting diodes to submicrometer sizes. Applied Physics Letters, 81 (10). 1756-1758 doi:10.1063/1.1504880
Fiore, A., Rossetti, M., Alloing, B., Paranthoen, C., Chen, J. X., Geelhaar, L., Riechert, H. (2004) Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots. Physical Review B, 70 (20) doi:10.1103/physrevb.70.205311
Sun, H. D., Macaluso, R., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., Riechert, H. (2003) Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures. Journal of Applied Physics, 94 (3). 1550-1556 doi:10.1063/1.1590413
Wei, Y. Q., Wang, S. M., Ferdos, F., Vukusic, J., Larsson, A., Zhao, Q. X., Sadeghi, M. (2002) Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm. Applied Physics Letters, 81 (9). 1621-1623 doi:10.1063/1.1503156
Jin, S. R., Sweeney, S. J., Tomić, S., Adams, A. R., Riechert, H. (2003) Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure. Applied Physics Letters, 82 (14). 2335-2337 doi:10.1063/1.1566468
Birkedal, D., Bloch, J., Shah, J., Pfeiffer, L. N., West, K. (2000) Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature. Applied Physics Letters, 77 (14). 2201-2203 doi:10.1063/1.1315347
Bloch, J., Shah, J., Pfeiffer, L. N., West, K. W., Chu, S. N. G. (2000) Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm. Applied Physics Letters, 77 (16). 2545-2547 doi:10.1063/1.1289493
 
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