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Kawaguchi, M., Miyamoto, T., Gouardes, E., Kondo, T., Koyama, F., Iga, K. (2002) Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells. Applied Physics Letters, 80 (6). 962-964 doi:10.1063/1.1448656

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells
JournalApplied Physics Letters
AuthorsKawaguchi, M.Author
Miyamoto, T.Author
Gouardes, E.Author
Kondo, T.Author
Koyama, F.Author
Iga, K.Author
Year2002 (February 11)Volume80
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1448656Search in ResearchGate
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Mindat Ref. ID8532642Long-form Identifiermindat:1:5:8532642:2
GUID0
Full ReferenceKawaguchi, M., Miyamoto, T., Gouardes, E., Kondo, T., Koyama, F., Iga, K. (2002) Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells. Applied Physics Letters, 80 (6). 962-964 doi:10.1063/1.1448656
Plain TextKawaguchi, M., Miyamoto, T., Gouardes, E., Kondo, T., Koyama, F., Iga, K. (2002) Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells. Applied Physics Letters, 80 (6). 962-964 doi:10.1063/1.1448656
In(2002, February) Applied Physics Letters Vol. 80 (6) AIP Publishing

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Pan, Z., Miyamoto, T., Schlenker, D., Sato, S., Koyama, F., Iga, K. (1998) Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine. Journal of Applied Physics, 84 (11). 6409-6411 doi:10.1063/1.368967
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